2019
DOI: 10.1021/acsami.9b04069
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Accurate Threshold Voltage Reliability Evaluation of Thin Al2O3 Top-Gated Dielectric Black Phosphorous FETs Using Ultrafast Measurement Pulses

Abstract: Few-layer black phosphorus (BP) has attracted significant interest in recent years due to electrical and photonic properties that are far superior to those of other two-dimensional layered semiconductors. The study of long term electrical stability and reliability of black phosphorus field effect transistors (BP-FETs) with technologically relevant thin, and device-selective, gate dielectrics, stressed under realistic (closer to operation) bias and measured using state-of-the-art ultrafast reliability character… Show more

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Cited by 13 publications
(13 citation statements)
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“…The charge can be trapped in the oxide near the 2D channel/dielectric or the back gate/dielectric interface. 1,19,20 However, the latter is found to be dominating at high T in these systems. 2 A comparison of this work with previous reports on thermally assisted memory is presented in Table I.…”
mentioning
confidence: 79%
“…The charge can be trapped in the oxide near the 2D channel/dielectric or the back gate/dielectric interface. 1,19,20 However, the latter is found to be dominating at high T in these systems. 2 A comparison of this work with previous reports on thermally assisted memory is presented in Table I.…”
mentioning
confidence: 79%
“…According to previous reports, packaging the device is the simplest and most effective way to solve the above problems [245] So both Kim et al [246] and Yury et al [154] used Al 2 O 3 or a Al 2 O 3 -related compounds to protect the BP-based FET (Figure 2b). Goyal et al [247] also fabricated a BP-based FET, which is connected by a top-gated Al 2 O 3 dielectric and a global 90-nm-thick back-gated SiO 2 layer as the electrodes, as shown in Figure 2c. In addition, Guo [248] and his team presented a novel metal-ion modification strategy to improve the stability and performance of BP-based FET, as shown in Figure 2d.…”
Section: Field-effect Transistor (Fet)mentioning
confidence: 99%
“…Reproduced with permission. [247] Copyright 2019, American Chemical Society. d) Schematic of BPÀMoS 2 heterojunction device.…”
Section: Memory Devicesmentioning
confidence: 99%
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“…Transition metal dichalcogenides (TMDCs) are a family of 2DLMs in the form of MX 2 compounds, where M is a transition metal (Mo, W, Re) and X is a chalcogen (S, Se, Te). TMDCs are promising for electronic applications due to their semiconducting behaviour as opposed to semi-metallic graphene, and better thermal stability than materials such as black phosphorus and silicene [14][15][16][17][18][19].…”
mentioning
confidence: 99%