Enhanced thermally aided memory performance using few-layer ReS2 transistors

Abstract

Contactless pick-and-place of millimetric objects using inverted near-field acoustic levitation Applied Physics Letters 116, 054104 (2020);

Laser‐Assisted Multilevel Non‐Volatile Memory Device Based on 2D van‐der‐Waals Few‐Layer‐ReS2/h‐BN/Graphene Heterostructures

“…Previously thermal assist memory operations have been studied in ReS 2 , MoS 2 based FET devices, where it was found that the intrinsic oxide traps, intrinsic defects/traps in channel material, and/or charge trapping and detrapping between the oxide and p + Si gate are the various reasons for the hysteresis modulation in memory operation. [ 26,27 ] Thermal stability of the retention properties and hysteresis width of the ReS 2 /h‐BN/graphene memory operation are tested (Figures S6 and S7, Supporting Information), which indicates that the memory operation is almost independent of temperature variation. Moreover, ReS 2 /h‐BN FET shows very less temperature dependent transfer characteristics, which further nullify the possibility of thermal assist memory operation of the ReS 2 /h‐BN transistors (Figure S8, Supporting Information).…”

Electron Irradiation of Metal Contacts in Monolayer MoS2 Field-Effect Transistors

“…The cathodoluminescence spectrum (Figure c) shows that electrons lose their energy and are stopped (Figure d) mostly in the Ti/Au metal stack, while they reach and are absorbed in the Si substrate when the irradiation is on the channel. The high release of energy in the metal contacts, similarly to thermal annealing, , induces Ti–MoS 2 reactions and creates contact with the reduced Schottky barrier and contact resistance. Conversely, when we directly irradiate the MoS 2 channel, energy is prevalently adsorbed in the Si bulk and its effect manifests only through the positive charge traps generated in the SiO 2 layer.…”

Restricted Channel Migration in 2D Multilayer ReS2

“…3,21 Furthermore, Goyal et al demonstrated a feasible memory application using few-layer ReS 2 transistors upon the observance of two plateaus in its transconductance curves. 23 Nevertheless, this genetic carrier transport mechanism of a 2D multilayer platform has not been extensively explored because of i) an insufficient electrostatic vertical electric field or minimum accumulated carrier density necessary to observe the conducting channel redistribution, ii) an atomically thin material thickness limiting the spatial channel migration, and iii) numerous oxide trap/defect sites degrading carrier mobility. These experimental constraints considerably prevent our full understanding of the carrier transport mechanism in 2D multilayer materials, consequently implying the importance of the thickness of such materials and the degree of the interlayer energy barrier, which relies strongly on the electrostatic drain (V D ) and gate (V BG ) bias conditions to achieve a clear insight into the distinct carrier transport mechanism in multiple 2D layers.…”

“…For example, Das et al systematically reported nonmonotonic thickness-dependent carrier mobility with respect to different metal electrodes ascribing to the Thomas–Fermi charge screening and interlayer coupling in MoS 2 multilayers. , In addition, Shim and Moon et al investigated systematically the thickness-dependent optoelectronic properties of ReS 2 thin-film transistors, , and Lee and Kim et al probed the effects of interlayer tunneling barrier effects on the current fluctuation in a multilayer ReS 2 transistor with respect to the top and bottom surfaces. , Furthermore, Goyal et al demonstrated a feasible memory application using few-layer ReS 2 transistors upon the observance of two plateaus in its transconductance curves . Nevertheless, this genetic carrier transport mechanism of a 2D multilayer platform has not been extensively explored because of (i) an insufficient electrostatic vertical electric field or minimum accumulated carrier density necessary to observe the conducting channel redistribution, (ii) an atomically thin material thickness, which limits the spatial channel migration, and (iii) numerous oxide trap/defect sites, which degrade the carrier mobility.…”