2020
DOI: 10.1109/led.2020.3011505
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Achieving Highly Efficient and Stable Quantum Dot Light-Emitting Diodes With Interface Modification

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Cited by 14 publications
(5 citation statements)
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“…However, the notable current density fluctuation within 0–2 V indicates the presence of a certain amount of leakage current in the device, which is known to be an important factor affecting the durability of the device. 33 In addition, the electron injection barrier (0.3 eV) between ZnMgO ETL and InP QDs is significantly smaller than that of between TFB HTL and InP QDs (0.6 eV) (Fig. 1a), which makes it easier for electrons to be injected into the InP QD EML, resulting in the charge carrier injection imbalance of QLED devices.…”
Section: Resultsmentioning
confidence: 98%
“…However, the notable current density fluctuation within 0–2 V indicates the presence of a certain amount of leakage current in the device, which is known to be an important factor affecting the durability of the device. 33 In addition, the electron injection barrier (0.3 eV) between ZnMgO ETL and InP QDs is significantly smaller than that of between TFB HTL and InP QDs (0.6 eV) (Fig. 1a), which makes it easier for electrons to be injected into the InP QD EML, resulting in the charge carrier injection imbalance of QLED devices.…”
Section: Resultsmentioning
confidence: 98%
“…The single devices show a lifetime ( T 50 ) of merely 4 khr, whereas the tandem devices boast a T 50 of 12 khr, nearly tripling in endurance at an initial luminance of 1000 cd m −2 . With an acceleration factor of n = 1.7, 50 a 1-fold increase in brightness increases the lifetime by a factor of about 3. The results are consistent with this, so the increase in lifetime is mainly due to the increase in luminance.…”
Section: Resultsmentioning
confidence: 99%
“…In the past few decades, quantum dot light-emitting diodes (QLEDs) exhibit great prospect in electroluminescent fullcolor displays field, including high color purity, narrow halfmaximum width, and high quantum efficiency. [1][2][3][4][5][6][7][8][9][10] Although the single transport layer, which cannot effectively reduce the height of the hole injection barrier. [13] Therefore, to construct a stepwise double HTL is of great value to modulate charge injection balance by gentling the energy barrier.…”
Section: Introductionmentioning
confidence: 99%
“…In the past few decades, quantum dot light‐emitting diodes (QLEDs) exhibit great prospect in electroluminescent full‐color displays field, including high color purity, narrow half‐maximum width, and high quantum efficiency. [ 1–10 ] Although cadmium‐based QLEDs have achieved high device performance, [ 11,12 ] it is pernicious to sustainable development. [ 13 ] Therefore, the development of cadmium‐free QLEDs display is essential for practical application.…”
Section: Introductionmentioning
confidence: 99%