Across field and across wafer flare: from KrF stepper to ArF scanner

Trouiller, Yorick; Luce, Emmanuelle; Barberet, Alexandra; Depre, L.; Schiavone, Patrick

doi:10.1117/12.389084

Cited by 5 publications

(2 citation statements)

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“…[1] Y. Troullerand reported CD variation caused by flare. [2] Mechanism of CD shrink was examined in A.Habermas's paper. [3] In this study we not only classified factors of CD variation of exposure fool, track and CD-SEM but also determined the proportion of each factor of intra wafer by converting factors of each variation into CD variation.…”

Section: Introductionmentioning

confidence: 99%

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CD error budget analysis in ArF lithography

Otsuka

Sakamoto

2004

SPIE Proceedings

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As for CD (Critical Dimension) control, we classified factors of CD variations in each process. We quantified the factors occurred in the devices such as exposure tool, coater/developer and CD-SEM in 193nm lithography. In the coater/developer, influence of PEB (Post Exposure Bake) on CD variation was notably found and made up about 70% of the Track-related factors. This fact indicates that a great importance of PEB in 193nm process. Regarding the exposure tool, we quantified the CD variations caused by Flare using Kirk method. We determined that this issue was influenced by the exposure field layout, and the variation of intra wafer was 1.58nm. As for a CD-SEM, we measured the CD variations caused by the electron beam-induced CD shrink, and LWR (Line Width Roughness). The LWR accounts for about 40% of the total measurement errors, and affects CD variations higher as finer line pattern. We reduced influence of LWR on CD variations by extending measurement points and averaging. Thus we acquired the CD uniformity close to the actual CD.

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Section: Introductionmentioning

confidence: 99%

“…Measure the length of each diamond-shaped pattern and determine the focus of each diamond -shaped pattern by using the relational expression obtained in (1). (3) Use a relational expression of previously measured DOF, convert the amount of focus shift obtained in(2), and convert into CD variations.…”

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confidence: 99%

CD error budget analysis in ArF lithography

Otsuka

Sakamoto

2004

SPIE Proceedings

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The development of laser-produced plasma EUV light source

Ding¹,

Wei²,

Huang³

et al. 2022

Chip

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Correction for local flare effects approximated with double Gaussian profile in ArF lithography

Osawa

Yao

Aoyama

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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A method has been developed for correcting line width variations due to midrange flare with a scattering range of over a few tens of micrometers (which we call local flare). It is shown that the conventional single Gaussian point spread function (PSF) is not sufficient and that a double Gaussian point spread function is needed to explain the line width variation caused by local flare. The remaining errors after correction are discussed under the assumptions that the mask correction is linear with respect to local flare intensity and is independent of pattern layout considering the order of the local flare correction (LFC) and optical proximity correction (OPC). This simple sizing method can reduce the critical dimension (CD) variation regardless of whether LFC is done before or after OPC. The LFC performance was evaluated using actual 90-nm-node LSI data. A much faster correction time than that of OPC was achieved by introducing the area density map method. The CD variation due to local flare was reduced from 22 to 5 nm.

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Across field and across wafer flare: from KrF stepper to ArF scanner

Cited by 5 publications

References 0 publications

CD error budget analysis in ArF lithography

CD error budget analysis in ArF lithography

The development of laser-produced plasma EUV light source

Correction for local flare effects approximated with double Gaussian profile in ArF lithography

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