Adaptive CMOS LNA using highly tunable active inductor

Kia, Hojjat Babaei

doi:10.1109/iraniancee.2014.6999491

Cited by 15 publications

(5 citation statements)

References 11 publications

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“…Because of the merits of low noise figures, better linearity, high gain, and good I/O matching, circuits with inductive feedback have been widely used in the wireless transceiver system. In LNA with source inductance negative feedback, the gain, NF, and the impedance matching of the LNA could be optimized, [18]. In recent times, the LNA has been designed for multiband wireless applications, where AI has been used to check the characteristics at lower technology and the phase shifting property that can be used in shifters is indicated in, [19].…”

Section: Low Noise Amplifiermentioning

confidence: 99%

On-Chip Tunable Active Inductor Circuit for Radio Frequency Ics

Prashar,

Kapur

2023

Wseas Transactions on Electronics

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The work presents a design of a gyrator-based on-chip tunable active inductor (AI) which can become an integral part of high-frequency integrated circuits. The proposed AI uses the Floating gate technology-based PMOS (FGPMOS) simulation model, where the on-chip, non-volatile programming ability of FGPMOS is used as a tunable active feedback resistor. The circuit specifications are first derived for the application at 800MHz to 2GHz. The design is simulated at 350nm CMOS technology and shows a temperature sensitivity of 0.13mV/oC as well as a noise sensitivity of about 10.97nV/Hz. The precise programming range of inductance value from 3nH to 9nH can be achieved. The circuit has a power dissipation of 5.02mV and a moderately high-quality factor of about 120. The layout of the proposed circuit has been designed on Cadence Virtuoso and fabricated at ON-Semiconductor, C5 CMOS process foundry of MOSIS fabrication service, USA. The complete design has a chip area of 18x30µm2. The fabricated results illustrate the on-chip tuning ability of the proposed AI from 3nH to 7nH with the help of externally applied Tunnelling and Injection voltages, respectively. The proposed design also simulates a tunable bandpass filter and a tunable Low Noise Amplifier.

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Section: Low Noise Amplifiermentioning

confidence: 99%

On-Chip Tunable Active Inductor Circuit for Radio Frequency Ics

Prashar,

Kapur

2023

Wseas Transactions on Electronics

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“…This results in a substantial increase in the die area and implementation costs. In addition, tunable active inductors have been explored in [7,8] to overcome the low quality factor of inductors and their large area consumption on chip. However, the drawbacks associated with the use of active inductor are higher power consumption and nonlinearity [9].…”

Section: Introductionmentioning

confidence: 99%

Design of Continuously Tunable Low Noise Amplifier for Multiband Radio

Aneja

2017

2017 Mediterranean Microwave Symposium (MMS)

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this paper presents the design of continuously tunable low noise amplifier with frequency tuning range from 2.2 to 2.8 GHz. The amplifier achieves input matching and tunability through a transformer based input matching network. The proposed circuit uses an inductively degenerated common source cascode amplifier to design the amplification stage. The circuit includes a phase shifter circuit to shift the phase of the input signal to achieve tunability through transformer. The LNA achieves a maximum gain of more than 17dB in the entire tuning range. The LNA attains a perfect impedance match across the tuning range and has a stable operation. In addition, it achieves a low noise figure ranging from 1.4dB to 5.2dB.

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“…Active inductors (AIs) synthesized by transistors have attracted increasing interest due to a number of unique advantages over its spiral counterpart including small chip area consumption, large inductance with wide tuning range, large and tunable quality factor, and high self-resonant frequency. [1][2][3][4][5] The popular synthesis method of AI is based on Gyrator-C principle. A gyrator consists of two back-to-back connected transistors as transconductors, and input capacitance C π of one transconductor acts as the load of the other transconductor, [1,6] then the gyrator-C behaves as a single-ended inductor.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4][5] The popular synthesis method of AI is based on Gyrator-C principle. A gyrator consists of two back-to-back connected transistors as transconductors, and input capacitance C π of one transconductor acts as the load of the other transconductor, [1,6] then the gyrator-C behaves as a single-ended inductor. Therefore, the performance of transistors has a decisive effect on the performance of active inductor.…”

Section: Introductionmentioning

confidence: 99%

“…It is shown that the AI parameters depend on the model parameters of transistors, such as capacitance, transconductance and resistance. Kia et al [1,6,9] proposed novel AIs and derived that L s can be expressed by transistor model parameters, so can Q and ω 0 . Kumari et al [3] studied the dependence of L s on the load capacitance C. Robert et al [10] discussed the Q enhance-ment with the feedback resistance R f .…”

Section: Introductionmentioning

confidence: 99%

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Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors

Zhao¹,

Zhang²,

Xie³

et al. 2016

Chinese Phys. B

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The effect of lateral structure parameters of transistors including emitter width, emitter length, and emitter stripe number on the performance parameters of the active inductor (AI), such as the effective inductance L s , quality factor Q, and self-resonant frequency ω 0 is analyzed based on 0.35-µm SiGe BiCMOS process. The simulation results show that for AI operated under fixed current density J C , the HBT lateral structure parameters have significant effect on L s but little influence on Q and ω 0 , and the larger L s can be realized by the narrow, short emitter stripe and few emitter stripes of SiGe HBTs. On the other hand, for AI with fixed HBT size, smaller J C is beneficial for AI to obtain larger L s , but with a cost of smaller Q and ω 0 . In addition, under the fixed collector current I C , the larger the size of HBT is, the larger L s becomes, but the smaller Q and ω 0 become. The obtained results provide a reference for selecting geometry of transistors and operational condition in the design of active inductors.

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Adaptive CMOS LNA using highly tunable active inductor

Cited by 15 publications

References 11 publications

On-Chip Tunable Active Inductor Circuit for Radio Frequency Ics

On-Chip Tunable Active Inductor Circuit for Radio Frequency Ics

Design of Continuously Tunable Low Noise Amplifier for Multiband Radio

Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors

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