Addressing limitations of photoluminescence based external quantum efficiency measurements

Paduthol, Appu; Juhl, Mattias K.; Trupke, Thorsten

doi:10.1063/1.5004193

Cited by 10 publications

(5 citation statements)

References 16 publications

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“…The PL spectrum shows only the cSi(n) band‐band luminescence peak. The spectral shape is the same for all samples and all illumination wavelengths, confirming that there is no spurious luminescence or luminescence from the aSi(i) layer . The thicknesses and the complex refractive index of the a‐Si were determined from a fit to spectroscopic ellipsometry data with a single Tauc‐Lorentz oscillator .…”

Section: Resultsmentioning

confidence: 99%

“…Measurement of the EQE PL was performed with an experimental setup that was built in house and is described in detail elsewhere. 19 The illumination is provided by 8 light-emitting diode (LED) arrays with centre wavelengths in the range from 365 to 660 nm. The spectral width of the LEDs was confirmed to have a negligible effect on our measurements.…”

Section: Methodsmentioning

confidence: 99%

“…The spectral shape is the same for all samples and all illumination wavelengths, confirming that there is no spurious luminescence or luminescence from the aSi(i) layer. 19 The thicknesses and the complex refractive index of the a-Si were determined from a fit to spectroscopic ellipsometry data with a single Tauc-Lorentz oscillator. 22 The optical constants for silicon and thermally grown SiO x from Herzinger et al 21 were used in the model.…”

Section: Carrier Injection In Asi(i)─sio X ─Csi(n) Structurementioning

confidence: 99%

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Measuring carrier injection from amorphous silicon into crystalline silicon using photoluminescence

Paduthol

Juhl

Nogay

et al. 2018

Progress in Photovoltaics

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In devices with intrinsic amorphous silicon layer on a crystalline silicon substrate, the light absorbed in the amorphous layer can be weakly electronically coupled into the silicon base. Such carrier injection has previously been reported from measurements on finished devices containing stacks of intrinsic and doped amorphous silicon layers. Here, we use spectral response of photoluminescence, a contactless approach, to investigate this carrier injection on significantly simpler structures. In such devices, the effect of absorption in the front layer can be measured by the internal quantum efficiency. A highly absorbing front layer is expected to cause a drop in the quantum efficiency at short wavelengths. However, if electron‐hole pairs that are generated in the front layer are subsequently injected into the base, the optical losses will be reduced, resulting in a partial recovery of the quantum efficiency at short wavelengths. Here, we quantify the efficiency of carrier injection from the intrinsic amorphous silicon front layer to the crystalline silicon base, by measuring the spectral response of photoluminescence heterojunction test structures. For devices with just an intrinsic amorphous silicon layer, the carrier injection from the layer was found to be close to unity.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Carrier Injection In Asi(i)─sio X ─Csi(n) Structurementioning

confidence: 99%

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Measuring carrier injection from amorphous silicon into crystalline silicon using photoluminescence

Paduthol

Juhl

Nogay

et al. 2018

Progress in Photovoltaics

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“…[ 9 ] The luminescence spectrum can be analyzed to calculate the external quantum efficiency. [ 10–13 ]…”

Section: Introductionmentioning

confidence: 99%

“…[9] The luminescence spectrum can be analyzed to calculate the external quantum efficiency. [10][11][12][13] We adopt the approach by Greulich et al and propose an empirical model for IV determination purely based on contactless measurement techniques targeted on using less and only inline applicable measurement techniques for industrial usage.…”

mentioning

confidence: 99%

Contactless InlineIVMeasurement of Solar Cells Using an Empirical Model

et al. 2022

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The current–voltage measurement is the most important measurement in solar cell quality control. As the contacting process of cells results in mechanical stress and consumes a significant amount of measurement time, this work presents an IV characterization based on contactless measurements only. An empirical model is introduced that can derive the full IV curve and IV parameters as the open‐circuit voltage, short‐circuit current density, fill factor, and efficiency. As a basis, a series of photoluminescence and contactless electroluminescence images and spectral reflectance measurements are used. An advantage of the model's convolutional neural network design lies in the semantic compression of local image structures across the input data. Within an ablation study, it is shown that the empirical model is well suited to combine these data sources, which is the optimal input configuration for contactless IV derivation. The accuracy, e.g., with an error in efficiency of 0.035 % abs and correlation of over 99%, is similar to comparing two contacting IV measurement devices. The contactless IV curves also have a close fit to their contacted counterparts. Within simulations on module level, it is demonstrated that contactless binning performs as well as contacting binning and does not result in any additional mismatch loss.

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