Adjusted surface work function of InN films annealed at vacuum and at high-pressure N2 conditions

Liu, W.F.; Luo, Yi; Sang, Yong; Bian, Jiming; Zhao, Yue; Liu, Y.H.; F, Qin

doi:10.1016/j.matlet.2012.12.012

Cited by 6 publications

(1 citation statement)

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“…Due to the improvement of growth methods in recent years, InN films have been successfully grown on α-Al 2 O 3 and other heterogeneous substrates by magnetron sputtering [5], metal-organic chemical vapor deposition (MOCVD) [6][7][8][9], atomic layer deposition (ALD) [10], molecular beam epitaxy (MBE) [11], plasma-enhanced molecular beam epitaxy (PEMBE), and other methods [4,10,[12][13][14][15][16][17][18]. However, the heat dissipation performance of these substrates is poor; therefore, it is still difficult to select appropriate substrate materials for high frequency and power devices [19][20][21]. Diamond is characterized by high thermal conductivity and excellent heat resistance.…”

Section: Introductionmentioning

confidence: 99%

Study on the Performance Impact of Introducing an InN Buffer Layer at Various Deposition Temperatures on InN Film Grown by ECR-PEMOCVD on Free-Standing Diamond Substrate

2022

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In this study, InN films are grown at a relatively low temperature by electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) on free-standing diamond substrates. Due to the high lattice mismatch rate between InN film and the free-standing diamond substrate, the function of a buffer layer is to build a bridge between the substrate and film to reduce the lattice mismatch between them. Therefore, here, we study the performance impact of introducing an InN buffer layer at various deposition temperatures and explore the optimal buffer layer deposition temperature used to grow relatively high-quality InN films. The experimental results show that when an InN buffer layer is introduced at a deposition temperature of 100 °C, the growth direction of the InN film is perpendicular to the substrate with a high c-axis preferred orientation, the roughness of the surface is minimal, and the particle sizes are consistent with growth in the same direction. Additionally, the carrier mobility is highest, and the carrier concentration is lowest compared with other conditions.

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