Adjusting the crystal size of InSb nanowires for optical band gap energy modification

A novel high performance photodetection based on axial NiO/β-Ga2O3 p-n junction heterostructure nanowires array

“…It is observed that crystallite size and d-spacing reduced in case of axial HS NW sample as compared to HS TF. The reduction in the crystallite size can be attributed to the change in nanostructure from a 2D material to a 1D material [34]. Similar results of reduction in crystallite size were also reported by Juan et al [29].…”

Surface band bending caused by native oxides on solution-processed twinned InSb nanowires with p-type conductivity

“…[7][8][9][10][11][12][13] In particular, InSb NWs are very promising for use in FET devices, which are pivotal to modern Si-based semiconductor technologies, due to their narrow band gap (∼0.17 eV), large absolute value of the g factor (∼51) and huge exciton Bohr radius (∼61 nm). [14][15][16][17] InSb NWs have been synthesized by several groups via the VLS mechanism such as molecular beam epitaxy (MBE), chemical vapor deposition (CVD) and metal organic vapor phase epitaxy (MOVPE). [18][19][20] It is proved that the appropriate crystal structures and suitable aspect ratios of InSb NWs can bring significant improvements in the electrical transport properties of NW-based FETs.…”