Advanced copper interconnections for silicon CMOS technologies

Torrès, J.

doi:10.1016/0169-4332(95)00105-0

Cited by 97 publications

(30 citation statements)

References 12 publications

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“…This is due to the fact that Cu has a lower resistivity, higher electric conductivity, and higher electromigration (EM) resistance than Al-based material. [1][2][3] Nevertheless, Cu film and line fabrication still needs to improve in terms of manufacturability and reliability. Two concerns for Cu interconnects, in addition to manufacturability, are stress voiding [4][5][6] and electromigration.…”

Section: Introductionmentioning

confidence: 99%

Effect of film thickness on the evolution of annealing texture in sputtered copper films

Park

Field

Nowell

et al. 2005

Journal of Elec Materi

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Microstructural evolution during elevated temperature annealing of sputter deposited copper (Cu) films was investigated by electron backscatter diffraction (EBSD). Analysis of films was performed both in situ using a heating stage, and by ex-situ observation of microstructural evolution. It was noted that not only is the Cu film texture and grain size a function of film thickness, but also that the fraction of twin boundaries present in the material is strongly dependent upon film thickness. This is explained by means of a simple model that considers the energy of the system. Surface and interface energies, as well as grain boundary energies for random high angle boundaries and for twin boundaries (both coherent and incoherent planes) are used in the determination. The model was shown to accurately predict the twin boundary size in self-annealed films. This type of analysis also results in a texture map similar to that presented by Thompson, 12 but incorporates the development and effect of twin boundaries, so that additional texture components (in addition to 111 and 100 fibers) are included.

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Section: Introductionmentioning

confidence: 99%

Effect of film thickness on the evolution of annealing texture in sputtered copper films

Park

Field

Nowell

et al. 2005

Journal of Elec Materi

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“…Recently, copper has been used as an alternative metal for interconnection of ULSI circuits, since it has lower resistivity and stronger resistance to electromigration than aluminum [1]. In order to achieve copper interconnection of minimized scale, a novel CVD method called metal chloride reduction-chemical vapor deposition (MCR-CVD) has been under development [2,3].…”

Section: Introductionmentioning

confidence: 99%

Desorption process of copper chlorides from copper surface

2008

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“…The strong interaction between Cu and Si degrades the copper metallization performance. 5 Thus, a barrier layer between Cu and Si must be implemented.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of DC-sputtered Glassy TaCoN Thin Film for Copper Metallization

Fang

Chen

2007

Journal of Elec Materi

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The failure mechanism of the TaCoN barrier for copper metallization was examined using films by direct current (dc) magnetron reactive sputtering at various nitrogen flow rates. The as-deposited TaCoN films had a glassy structure and were free from intermetallic compounds. Optimizing the nitrogen flow rate during sputtering maximized the thermal stability of the Si/Ta 66.8 Co 11.4 N 21.8 /Cu metallization system up to an annealing temperature of 750°C when the film was deposited using a nitrogen flow rate of 1 sccm, as revealed by using X-ray diffraction, a scanning electron microscope, a fourpoint probe and a transmission electron microscope. Structural analysis indicated that the failure mechanisms of the studied Si/TaCoN/Cu stacked films involved the initial dissociation of the barrier layer that was annealed at a specific temperature, and the subsequent formation of diffusion paths along which the copper penetrates through the TaCoN barrier layer to react with underlying Si. The high formation temperature of the Cu 3 Si phase demonstrated that the studied film was highly stable, indicating that the TaCoN thin film is highly promising for use as a diffusion barrier for Cu metallization.

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Advanced copper interconnections for silicon CMOS technologies

Cited by 97 publications

References 12 publications

Effect of film thickness on the evolution of annealing texture in sputtered copper films

Effect of film thickness on the evolution of annealing texture in sputtered copper films

Desorption process of copper chlorides from copper surface

Evaluation of DC-sputtered Glassy TaCoN Thin Film for Copper Metallization

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