Advanced gate dielectric materials for sub-100 nm CMOS

Iwai, Hiroshi; Ohmi, Shun–ichiro; Akama, S.; Ohshima, C.; Kikuchi, Akira; Kashiwagi, I.; Taguchi, Junichi; Yamamoto, Hiroyuki; Tonotani, Junichi; Kim, Y.; Ueda, Isao; Kuriyama, Atsushi; Yoshihara, Yoshinobu

doi:10.1109/iedm.2002.1175917

Cited by 90 publications

(74 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…An interface apparently free of SiO 2 or silicate layers has also been observed in other studies on LaAlO 3 [26,28] or La 2 O 3 [46] films on Si, and has also been considered as an advantage of La 2 O 3 compared to HfO 2 films. [46] It is, however, possible to obtain almost SiO 2 -free interfaces also between HfO 2 -based dielectrics and Si, [47,48] or between Al 2 O 3 and Si. [49,50] At the same time, an interfacial layer can also still be formed between LaAlO 3 and Si.…”

Section: Laalo 3 Growth and Propertiesmentioning

confidence: 75%

Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum‐Aluminum Oxide Films

Kukli

Ritala

Pore

et al. 2006

Chemical Vapor Deposition

View full text Add to dashboard Cite

Atomic layer deposition (ALD) of lanthanum oxide on glass and silicon substrates was examined using lanthanum silylamide, La[N(SiMe 3 ) 2 ] 3 , and water as precursors in the substrate temperature range of 150-250°C. The effect of pulse times and precursor evaporation temperature on the growth rate and refractive index was investigated. The films remained amorphous regardless of the deposition conditions. The resulting La 2 O 3 films contained noticeable amounts of hydrogen and silicon and were chemically unstable while stored in ambient air. Lanthanum aluminum oxide films were achieved with stoichiometry close to that of LaAlO 3 at 225°C from La[N(SiMe 3 ) 2 ] 3 , Al(CH 3 ) 3 , and H 2 O. The lanthanum b-diketonate precursor, La(thd) 3 , was used as the reference precursor.

show abstract

Section: Laalo 3 Growth and Propertiesmentioning

confidence: 75%

Atomic Layer Deposition and Properties of Lanthanum Oxide and Lanthanum‐Aluminum Oxide Films

Kukli

Ritala

Pore

et al. 2006

Chemical Vapor Deposition

View full text Add to dashboard Cite

show abstract

“…It is worth mentioning here that among the lanthanides, La 2 O 3 is perhaps the most appropriate high-k material for future [28]. The crystalline temperature of HfO 2 can be enhanced by alloying with Al 2 O 3 to form an HfAlO material.…”

Section: Gate Dielectricmentioning

confidence: 99%

Moore’s Law for Photonics and Electronics

Radamson¹,

Thylén²

2015

Monolithic Nanoscale Photonics–Electronics Integration in Silicon and Other Group IV Elements

View full text Add to dashboard Cite

“…In addition to the HfO 2 -based dielectrics, rare-earth (RE) metal oxide, such as La 2 O 3 , Pr 2 O 3 , Nd 2 O 3 , Gd 2 O 3 , Dy 2 O 3 , and Er 2 O 3 [5][6][7][8][9][10], is being considered as one of the most promising high-k materials due to its superior properties including a high dielectric constant, a large bandgap, and good thermal stability in contact with the Si substrate. However, the moisture absorption is a major problem with RE oxides, leading to a thicker film and a larger flat-band voltage shift [11]. Zhao et al [12] demonstrated that the moisture absorption degrades the k value of La 2 O 3 film on silicon due to the formation of La(OH) 3 film and increases the surface roughness of La 2 O 3 film after exposure to an air ambient.…”

Section: Introductionmentioning

confidence: 98%