1999
DOI: 10.1109/16.791983
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Advanced manufacturing concepts for crystalline silicon solar cells

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Cited by 101 publications
(40 citation statements)
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“…An obvious approach towards reducing the cost of silicon photovoltaic modules is to reduce the cost of the silicon substrate, which accounts for 40-55% of the current module cost. 1,2 The PC1D simulation of the effect of bulk lifetime (τ) and back surface recombination velocity (BSRV) in Fig. 1 shows that high efficiency screen-printed solar cells can be fabricated by using relatively low-quality, but thin substrates (100 µm), if a high quality surface passivation treatment is applied.…”
Section: Introductionmentioning
confidence: 99%
“…An obvious approach towards reducing the cost of silicon photovoltaic modules is to reduce the cost of the silicon substrate, which accounts for 40-55% of the current module cost. 1,2 The PC1D simulation of the effect of bulk lifetime (τ) and back surface recombination velocity (BSRV) in Fig. 1 shows that high efficiency screen-printed solar cells can be fabricated by using relatively low-quality, but thin substrates (100 µm), if a high quality surface passivation treatment is applied.…”
Section: Introductionmentioning
confidence: 99%
“…More research is necessary to further develop lowcost manufacturing processes for high-efficiency solar cells (Rohatgi et al 1994). Previous works by several investigators have proposed various techniques to address these issues (Nijs et al 1999). …”
Section: Introductionmentioning
confidence: 99%
“…To solve this problem, data driven modeling techniques have been developed and applied to real world problems. Least squares estimation for linear models that is one of the curve fitting methods is employed for solar cell modeling, and as another early research, a statistical method was used for modeling (Green et al 1984;Rohatgi et al 1984;Nijs et al 1999;Mottet 1980). These approaches could give good performance when there is uncertainty in the measurement data (Agostinellia et al 2003).…”
Section: Introductionmentioning
confidence: 99%
“…This is in agreement with FTIR results: hydrogen diffuses-out mainly by breaking Si-H bonds (3.1 eV) for Si-rich SiN x films with a low stoichiometry x and less by breaking N-H bonds (4.1 eV) for N-rich SiN x films. The released hydrogen is of importance for deactivating the electrically active defects in solar-grade silicon substrates [35] [36]. The bulk passivation efficiency is not necessarily determined by the amount of desorbed hydrogen during annealing.…”
Section: Structural Properties: Rbs Erda Infrared Measurementsmentioning
confidence: 99%