Advanced Si/SiGe HBT architecture for 28-nm FD-SOI BiCMOS

Abstract

This paper presents a novel Fully Self-Aligned (FSA) in [9]). In order to achieve this goal, the architecture is fIrstly Si/SiGe HBT architecture using Selective Epitaxial Growth evaluated and optimized by TCAD simulation before (SEG) and featuring an Epitaxial eXtrinsic Base Isolated from launching the fabrication process trials.the Collector (EXBIC). The one is integrated into the bulk area of the 28-nm FD-SOI CMOS technology developed atThe fIrst part of the paper presents the fabrication process STMicroelectronics. All the parameters of the architecture such flow and the key features of the EXBIC architecture. In the as the boron-doped base link, the emitter width and height, the second part, electrical performances of this architecture pedestal oxide and sidewall thicknesses are evaluated by TCAD integrated into the bulk area part (called "NO SO" for No SOl) simulation. A low base-collector capacitance, independent from of the C28FD are systematically evaluated by TCAD the extrinsic base doping is obtained. Optimized architecture simulations. All the technological parameters of the exhibits 420 GHZ/T and 780 GHZ/MAX. architecture such as the boron in-situ doped base link, the emitter width and height, the pedestal oxide and sidewall Keywords-BiCMOS, SiGe HBT, FD-SOl, TCAD, thicknesses are thoroughly investigated. The results are architecture, thermal budget, vertical profile.discussed in the last section, where we also draw the conclusion I.

SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems

“…A Super Shallow Trench Isolation (SSTI) is implemented to reduce the base-collector capacitance. Finally, a STMicroelectronics proprietary SiGe HBT architecture, called EXBIC (for Epitaxial eXtrinsic Base Isolated from the Collector) [14], is being developed to address the f MAX challenge. The key feature of this architecture, common to the IHP and Infineon ones, is a boron in-situ doped epitaxial base link used to reduce the extrinsic base resistance.…”

(Invited) Integration of an Epitaxial-Base-Link HBT Device with fT = 300GHz, fmax 480GHz in 90nm CMOS

“…HBT architectures in volume production today are limited to an fmax of up to 400GHz (1),( 2),(3),(4), (5), (6). Alternative HBT architectures to overcome this limitation have been proposed (7), (8), (9), (10).…”

TCAD Calibration of High-Speed Si/SiGe HBTs in 55-nm BiCMOS

“…SiGe HBTs technology has demonstrated usefulness and expediency in millimeter-wave applications for decades and a clear trend is ongoing toward the terahertz (THz) domain where a variety of new applications [1] are arising today. The SiGe HBTs module has been continuously integrated into denser and faster CMOS nodes such as 90-nm CMOS [2], 55nm CMOS [3] and is being evaluated in 28-nm FD-SOI CMOS [4]. The transit frequency (fT) and maximum oscillation frequency (fMAX) improvements have been driven by scaling strategies (lateral and vertical scaling).…”

“…Typically, the aim of the vertical scaling is to reduce the emitter-to-collector transit time (EC) in order to increase fT, while fMAX improvement is accomplished by the lateral scaling due to the decrease of parasitic components such as extrinsic base resistance (RBX) and base-collector capacitance (CBC). Furthermore, developing new architectures with low parasitic components is also a good choice to achieve higher fMAX performance [4,5]. These optimization processes are pushing SiGe HBT performances, but they are practically complicated and always raised the cost in the manufacturing because a large number of advanced process techniques, layouts and masks are required.…”