“…The detector was based on a CZT crystal (3.0 × 10.4 × 1.1 mm 3 ) grown by the boron oxide encapsulated vertical Bridgman (B-VB) growth technique [ 13 , 14 , 15 , 16 , 17 , 18 ]. Recently, B-VB CZT detectors with pixel and planar electrode geometries have been successfully realized at IMEM-CNR of Parma, Italy [ 13 , 14 , 15 , 16 , 17 , 18 ]. Generally, the detectors, equipped with quasi-ohmic gold electroless contacts, are characterized by very low leakage current (<100 pA at high bias voltage of 1000 V) and no bias-induced polarization effects [ 19 , 20 , 21 , 22 ].…”