2000
DOI: 10.1108/13565360010332417
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Advances in microwave MCM‐D technology

Abstract: The thin film multilayer multichip module technology (MCM‐D) was originally used for the interconnection of high speed digital circuits in a single module. Nowadays, the technology is more and more evolving towards use in the interconnection of RF and microwave circuits with integrated passive components. This paper gives an overview of this evolution towards microwave MCM‐D technology and the recent advances with respect to the integration of high quality passive components. With a discussion on the flip chip… Show more

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Cited by 9 publications
(5 citation statements)
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References 9 publications
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“…Finally, the capacitance C and inductance L are derived from its impedance equations (C = 1/wZ c and L = Z L /w). Equations (1)(2)(3)(4)(5) show how the data acquisition procedure [25] is implemented in ADS.…”
Section: Measurement and Data Acquisition Strategymentioning
confidence: 99%
See 1 more Smart Citation
“…Finally, the capacitance C and inductance L are derived from its impedance equations (C = 1/wZ c and L = Z L /w). Equations (1)(2)(3)(4)(5) show how the data acquisition procedure [25] is implemented in ADS.…”
Section: Measurement and Data Acquisition Strategymentioning
confidence: 99%
“…MCM-D technology is based on layers of dielectric and metals over a substrate that allows the fabrication of passive devices. Such devices work in the radiofrequency (RF) region and may function as external components for dies that can be assembled by wire-bonding and/or flipchip techniques allowing the fabrication of very compact and highly integrated circuits [3,4], i.e., MCM is very important due to the ability of producing interconnection between many dies on the same substrate.…”
Section: Introductionmentioning
confidence: 99%
“…1 are realized on the lower level, immediately on the carrier substrate [5]. The resistor material is TaN, with typical resistance values of 10-100 Ω per square and temperature coefficients of less than 20-150 ppm per centigrade.…”
Section: Integrated Passivesmentioning
confidence: 99%
“…Especially on standard silicon, the low resistivity of the silicon causes dielectric losses, hereby limiting the quality of the inductors, integrated in a conventional Al back-end of line, to about 5 at 1 or 2 GHz. When realizing the same spiral inductors in MCM-D on a low loss alumina or glass carrier substrate, the quality factor increases tremendously at a lower overall cost [5]. Quality factors above 100 @ 10 GHz (for inductance values < 1.7 nH) can be realized.…”
Section: Integrated Passivesmentioning
confidence: 99%
“…The MCM-D technology allowed the interconnection of high-speed digital integrated on circuit applications, producing high-density interconnections to assemble several components in one single module or package [7][8][9][10].…”
Section: Introductionmentioning
confidence: 99%