Advances in thermal interface technology: mono-metal interconnect formation, processing and characterisation

Wunderle, Bernhard; Klein, M.; Dietrich, Lothar; Ras, Mohamad Abo; Mrossko, R.; May, Daniel; Schacht, R.; Oppermann, Hermann; Michel, B.; Reichl, H.

doi:10.1109/itherm.2010.5501343

Cited by 13 publications

(7 citation statements)

References 14 publications

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“…This results in a high position and tilt stability of the process. Furthermore the pure metal interconnect has up to 10 times better heat conductivity than eutectic solders (380 W/mK have been achieved by this process [9]) and therefore up to 300 times better than glue. A third advantage is the high ductility, which enables the possibility to connect parts with higher CTE mismatch.…”

Section: Sinteringmentioning

confidence: 95%

Advanced packaging methods for high-power LED modules

et al. 2015

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LED luminaires are already beyond retrofit systems, which are limited in heat dissipation due to the old fitting standards. Actual LED luminaries are based on new LED packages and modules. Heat dissipation through the first and second level interconnect is a key issue for a successful LED package. Therefore the impact of known bonding technologies as gluing and soldering and new technologies like sintering and transient liquid phase soldering were analyzed and compared. A realized hermetic high power LED package will be shown as example. The used new techniques result in a module extremely stable against further assembly processes and harsh operating conditions.

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Section: Sinteringmentioning

confidence: 95%

Advanced packaging methods for high-power LED modules

et al. 2015

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“…Most of these techniques are focused on thermal interface materials (TIM) [11,12,13] or are applied to much larger bond line thicknesses (several hundred µm) in the case of C4 bumps [14] or underfill materials [15]. In [16] an extensive overview of experimental thermal characterization techniques is presented.…”

Section: D Sic Tsv + Cu-cu Bondingmentioning

confidence: 99%

Transient analysis based thermal characterization of die-die interfaces in 3D-ICs

Oprins

Cherman

Rebibis

et al. 2012

13th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems

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In this paper, we present a novel methodology using a thermal test chip to characterize the bulk thermal conductivity and the thermal contact resistance of underfill materials in diedie interfaces of 3D stacks for application-realistic test conditions. Since a silicon chip is used, the thermal properties can be extracted for the same material interfaces (finishing of the Si surface) and the same processing conditions (bonding and temperature profile during curing of the underfill material) as in the intended application. In the proposed methodology, transient thermal measurements obtained using a test chip with integrated heaters and sensors, are combined with thermal finite element simulations to extract the thermal properties.The proposed method is applied to extract the thermal properties and compare the thermal performance of 8 underfill materials. The materials are thermally characterized before and after curing. It is shown that the comparison of the temperature profiles before and after curing can indicate void for matio n or delamination dur ing the curing stage.

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“…Carlberg et al introduced and characterised the thermal performance of a nanostructured polymer-metal composite which consists of high-porosity nanofiber network infiltrated with a low melting temperature alloy (Carlberg et al 2008a;Carlberg et al 2008b;Carlberg et al 2009). Wunderle et al developed and applied different surface modification methods to create the so-called "nano-sponge" in a thin Au layer (Wunderle 2010). A second technology using Agpowder on Ag surface metallisation (sintering approach) has also been developed.…”

Section: Review Of Nanowire/ Nanotube Based Compositesmentioning

confidence: 99%