Aerosol Jet Printed WSe<sub>2</sub> Based RRAM on Kapton Suitable for Flexible Monolithic Memory Integration

Li, Yida; Sivan, Maheswari; Niu, Jessie Xuhua; Veluri, Hasita; Zamburg, Evgeny; Leong, Jinfeng; Chand, Umesh; Samanta, Subhranu; Wang, Xinghua; Feng, Xuewei; Zhao, Yunshan; Thean, Aaron

doi:10.1109/fleps.2019.8792256

Cited by 8 publications

(4 citation statements)

References 16 publications

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“…Moreover, printing offers a promising strategy for monolithic integration of various devices onto flexible substrates . A wide variety of printing techniques are available and have been extensively reviewed. , Nanomaterials-based printing techniques, formulation of printable inks, post-printing treatment, and integration of functional devices are important topics and have recently progressed substantially. − Fully printed sensors, displays, energy devices, , memory devices, transistors and circuits, , and integrated systems have been demonstrated. ,,,, Nevertheless, printed devices are limited in feature resolution (1–100 μm) and device consistency. While targeting low-performance (and low-cost) applications can circumvent these limitations, crafting solutions to improve processing quality is essential to expand the application space of printed sensors .…”

Section: Lab To End-usermentioning

confidence: 99%

“…28,900 Nanomaterials-based printing techniques, formulation of printable inks, post-printing treatment, and integration of functional devices are important topics and have recently progressed substantially. 900−902 Fully printed sensors, 874 displays, 903 energy devices, 680,904 memory devices, 905 transistors and circuits, 198,397 and integrated systems 906 have been demonstrated. 28,44,679,900,907 Nevertheless, printed devices are limited in feature resolution (1−100 μm) and device consistency.…”

Section: Lab To End-usermentioning

confidence: 99%

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Technology Roadmap for Flexible Sensors

et al. 2023

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Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited. To ease and to expedite their deployment, here, we identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions. We first analyze challenges in achieving satisfactory sensing performance for real-world applications and then summarize issues in compatible sensor-biology interfaces, followed by brief discussions on powering and connecting sensor networks. Issues en route to commercialization and for sustainable growth of the sector are also analyzed, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations. Additionally, we look at future intelligent flexible sensors. In proposing a comprehensive roadmap, we hope to steer research efforts towards common goals and to guide coordinated development strategies from disparate communities. Through such collaborative efforts, scientific breakthroughs can be made sooner and capitalized for the betterment of humanity.

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Section: Lab To End-usermentioning

confidence: 99%

Section: Lab To End-usermentioning

confidence: 99%

Technology Roadmap for Flexible Sensors

et al. 2023

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“…Moreover, several 2D materials such as the graphene and its derivatives, hexagonal boron nitride (hBN), molybdenum ditelluride (MoTe 2 ), molybdenum disulphide (MoS 2 ), molybdenum diselenide (MoSe 2 ), tungsten diselenide (WSe 2 ), tungsten disulfide (WS 2 ) and black phosphorus (BP) have been applied in various RRAM devices to obtain flexibility and optical transparency [231,232,[251][252][253][254][255][256]. Graphene was the very first 2D material to be used in electronic component systems, accompanied by several other members of the 2D family such as MXenes, hBN and transition-metal dichalcogenides (TMDs).…”

Section: -Dimensional Dielectric Materials For Rrammentioning

confidence: 99%

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

et al. 2023

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The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that will be fast, energy efficient and durable. The limited scaling capabilities of the conventional memory technologies are pushing the limits of data-intense applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS). Resistive random access memory (RRAM) is one of the most suitable emerging memory technologies candidates that have demonstrated potential to replace state-of-the-art integrated electronic devices for advanced computing and digital and analog circuit applications including neuromorphic networks. RRAM has grown in prominence in the recent years due to its simple structure, long retention, high operating speed, ultra-low-power operation capabilities, ability to scale to lower dimensions without affecting the device performance and the possibility of three-dimensional integration for high-density applications. Over the past few years, research has shown RRAM as one of the most suitable candidates for designing efficient, intelligent and secure computing system in the post-CMOS era. In this manuscript, the journey and the device engineering of RRAM with a special focus on the resistive switching mechanism are detailed. This review also focuses on the RRAM based on two-dimensional (2D) materials, as 2D materials offer unique electrical, chemical, mechanical and physical properties owing to their ultrathin, flexible and multilayer structure. Finally, the applications of RRAM in the field of neuromorphic computing are presented.

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“…Scholars began to look for the possibility of new materials. With the vigorous development of material science in recent years, two-dimensional (2D) materials have jumped into people's eyes, and some research teams have begun to use 2D materials to make RRAM, such as graphene, hexagonal boron nitride (h-BN), molybdenum disulfide (MoS 2 ), Tungsten disulfide (WS 2 ), and molybdenum ditelluride (MoTe 2 ) [3][4][5][6][7] . 2D materials have potential for back-end-of-line (BEOL) devices and monolithic 3-dimensional (3D) integrated circuits due to the low thermal budget 8 .…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Rainfall- Groundwater Level Response in Taipei City, Taiwan

Chen¹,

Lin²,

Lee³

2021

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<p>The Taipei Basin, Taiwan has been densely populated and highly economically developed in recent decades. Global climate change has led to frequently flooding and drought events in recent years, formulating suitable measures to mitigate climatic disaster has become a crucial issue in this city. The sponge city concept is one of the most important options for disaster mitigation in highly urbanization areas. However, the city is also potentially threatened by soil liquefaction due to its sedimentary geology and increasing groundwater level. High groundwater level might be a key limiting factor in the promotion of sponge city. The aim of this study was to understand the relationship between rainfall and groundwater level and the impacts of cumulative rainfall, depth to groundwater table, and impervious pavement ratio on the rainfall/groundwater level response in study area. The cross-correlation function (CCF) was applied to analyze the correlation between rainfall and groundwater level data obtained from 20 observed wells and nearby rainfall gages during dry and wet seasons from 2012 to 2017. The significance groundwater recharge response can be found in 61% and 37% of the observation wells during the wet and dry seasons, respectively. Compared with the factors such as cumulative rainfall, and depth to groundwater table, the ratio of surface impervious pavement is the primary affecting factor behind the correlation between rainfall and groundwater level response. The analysis results also show the areas with shallow groundwater level, high imperious pavement ratio, and the groundwater level with no significant response to rainfall, are almost overlapped with the middle and high level liquefaction potential areas in this city. Measures such as the application of the sponge city concept to increase infiltration should be carefully reevaluated in this city. The research results can provide a reference for the future development of urban water resources management and disaster mitigation strategies under the challenge of globe climate change.</p>

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Aerosol Jet Printed WSe₂ Based RRAM on Kapton Suitable for Flexible Monolithic Memory Integration

Cited by 8 publications

References 16 publications

Technology Roadmap for Flexible Sensors

Technology Roadmap for Flexible Sensors

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

Characteristics of Rainfall- Groundwater Level Response in Taipei City, Taiwan

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Aerosol Jet Printed WSe2 Based RRAM on Kapton Suitable for Flexible Monolithic Memory Integration

Cited by 8 publications

References 16 publications

Technology Roadmap for Flexible Sensors

Technology Roadmap for Flexible Sensors

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

Characteristics of Rainfall- Groundwater Level Response in Taipei City, Taiwan

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Aerosol Jet Printed WSe₂ Based RRAM on Kapton Suitable for Flexible Monolithic Memory Integration