AES and SRUPS studies on surface passivation of GaAs by (NH4)2Sx sulfurization techniques

Hsieh, J. T.; Hwang, H. L.

doi:10.1016/0169-4332(95)00234-0

Cited by 4 publications

(3 citation statements)

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“…b). The Ga 2p 3/2 signal consists of two peaks (fitted as single Voigt profiles), which can be assigned to surface (I) and bulk (II) related contributions . After annealing, the overall intensity of the Ga 2p 3/2 emission is increased with an enhanced surface related component (II).…”

Section: Resultsmentioning

confidence: 99%

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Model experiments on growth modes and interface electronics of CuInS₂ : Ultrathin epitaxial films on GaAs(100) substrates

Calvet

Lewerenz

Pettenkofer

2014

Phys. Status Solidi A

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The heterojunction formation between GaAs(100) and CuInS 2 is investigated using ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), and low energy electron diffraction (LEED). Thin layers of CuInS 2 films were deposited in a step-by-step process on wet chemically pretreated GaAs(100) surfaces by molecular beam epitaxy (MBE) with a total upper thickness limit of the films of 60 nm. The film growth starts from a sulfur-rich GaAs(100) surface. XPS core level analysis of the substrate and film reveals initially a transitory growth regime with the formation of a Ga containing chalcopyrite phase. With increasing film thickness, a change in stoichiometry from Cu-poor to Cu-rich composition is observed. The evaluation of the LEED data shows the occurrence of a recrystallization process where the film orientation follows that of the substrate with the epitaxial relation GaAs{100}||CuInS 2 {001}. On the completed junction with a CuInS 2 film thickness of 60 nm, the band discontinuities of the GaAs(100)/CuInS 2 structure measured with XPS and UPS were determined as DE V ¼ 0.1 AE 0.1 eV and DE C ¼ 0.0 AE 0.1 eV, thus showing a type II band alignment.

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Section: Resultsmentioning

confidence: 99%

“…From the position of the Ga 2p 3/2 (I) peak in Fig. 1b, which is increased after annealing we conclude that a gallium sulfide (GaS) phase was formed upon heating [20]. Also the occurrence of the S 2p component (I) in the same figure supports this finding since it is assigned to a S-Ga bond [21].…”

Section: Cu 2pmentioning

confidence: 97%

Model experiments on growth modes and interface electronics of CuInS₂ : Ultrathin epitaxial films on GaAs(100) substrates

Calvet

Lewerenz

Pettenkofer

2014

Phys. Status Solidi A

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“…Photoemission spectroscopy of (ΝΗ4)2Sx treated surfaces revealed the existence of the As-S, Ga-S and S-S bonds [1]. Nowadays, there is a common opinion that the passivation removes the native oxide leaving the surface with a layer of sulfur bonded to Ga and As.…”

Section: Resultsmentioning

confidence: 99%

Photoinduced Defects Creation on Sulfur Passivated Surface of GaAs

Żytkiewicz¹,

Dobaczewski

Gómez³

et al. 1997

Acta Phys. Pol. A

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A comparison of S-passivation of III–V (001) surfaces using (NH4)2Sx and S2Cl2

Gnoth

Wolfframm

Patchett

et al. 1998

Applied Surface Science

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AES and SRUPS studies on surface passivation of GaAs by (NH4)2Sx sulfurization techniques

Cited by 4 publications

References 4 publications

Model experiments on growth modes and interface electronics of CuInS₂ : Ultrathin epitaxial films on GaAs(100) substrates

Model experiments on growth modes and interface electronics of CuInS₂ : Ultrathin epitaxial films on GaAs(100) substrates

Photoinduced Defects Creation on Sulfur Passivated Surface of GaAs

A comparison of S-passivation of III–V (001) surfaces using (NH4)2Sx and S2Cl2

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AES and SRUPS studies on surface passivation of GaAs by (NH4)2Sx sulfurization techniques

Cited by 4 publications

References 4 publications

Model experiments on growth modes and interface electronics of CuInS2 : Ultrathin epitaxial films on GaAs(100) substrates

Model experiments on growth modes and interface electronics of CuInS2 : Ultrathin epitaxial films on GaAs(100) substrates

Photoinduced Defects Creation on Sulfur Passivated Surface of GaAs

A comparison of S-passivation of III–V (001) surfaces using (NH4)2Sx and S2Cl2

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Model experiments on growth modes and interface electronics of CuInS₂ : Ultrathin epitaxial films on GaAs(100) substrates

Model experiments on growth modes and interface electronics of CuInS₂ : Ultrathin epitaxial films on GaAs(100) substrates