Ag-Ion-Based Transparent Threshold Switching Selector with Filament-Size-Dependent Rectifying Behavior

Abstract

A metal–insulator–metal-structured Ag-filament-based transparent threshold switch is developed as a selector device for a crossbar array, which can lead to high-density integration of advanced memory devices. Both threshold switching and rectifying behavior were achieved based on sensitive control of the filament size. Conduction mechanism analyses demonstrated that the rectifying behavior resulted from the Schottky barrier at the interface. From the threshold switching, including the rectifying behavior, the available crossbar array size is 105-times larger.

A steep-switching impact ionization-based threshold switching field-effect transistor

“…We obtain repetitive operation with low SS (32.8 mV dec −1 ) at room temperature, along with low dielectric injection efficiency (10 −6 ), through a structural design with separation of the conducting region (which determines on-state carrier transport) and the steep-switching region (where transition from off- to on-state occurs via impact ionization). Furthermore, compared to previously reported threshold switching devices using atomic filaments, 26–33 our device exhibits hysteresis-free switching characteristics because it is based on an impact ionization mechanism. The proposed I 2 S-FET overcomes the fundamental problem of dielectric degradation induced by hot carriers of impact ionization-based devices and has great potential to be extended to a monolithic steep-slope transistor array, which is considerably important in energy-efficient and high-performance electronic switches with ultra-low power loss.…”