Aging-free InP substrates ready for molecular beam epitaxial growth of InAlAs/InGaAs heterostructures

Abstract

Aging-free InP substrates ready for molecular beam epitaxy have been developed by the inert gas packaging technique. The surface degradation of the InP substrate after chemical cleaning was evaluated by the quality of the 2DEG heterostructure grown on the substrate. The InP substrate in a package filled with nitrogen gas was used for MBE growth. The Hall mobility of an InAlAs/InGaAs heterostructure directly grown on the InP substrate without any pretreatment or chemical etching is larger than 10 000 cm2 /V s at 300 K. There are no aging effects on the sample stored even after six months.

Determination of the flow and activation energy of phosphorus desorption during annealing of an InP(001) substrate in an arsenic flux under molecular beam epitaxy conditions

“…To exclude indium atoms coming from the oxide layer, we will consider the InPAs solid solution and InAs islands at two time points. The first time point is the moment of formation of the structure (4 × 2) in the diffraction pattern, which evidences of atomically clean surface of the substrate [35]. The formation of atomically clean surface indicates that all indium atoms from the oxide layer have been incorporated into the crystal structure.…”

Determination of the phosphorus desorption rate during high-temperature annealing of the InP(001) substrate in an arsenic flux

“…The experimental samples were divided into two series. The annealing of the first series was completed upon obtaining the (4×2) reconstruction [16]. The samples of the second series were additionally kept for 2 minutes in F As at T sub equal to the reconstruction formation temperature (4×2), after which the annealing process was completed.…”

Замещение фосфора на поверхности InP(001) при отжиге в потоке мышьяка

“…Предварительная очистка подложки и держателя от легколетучих соединений, следов химической обработки и воды проводилась при температуре 150 • C в специализированной камере установки МЛЭ, отделенной шиберным затвором от ростовой камеры. Затем окисный слой с поверхности подложки удалялся в ростовой камере МЛЭ установки прогревом до появления сверхструктуры (4×2) [16]. Температура отжига зависела от потока мышьяка, который варьировался в диапазоне (0.5−5.0) • 10 −5 Торр.…”