AgInSe2 Thin Films Prepared by Electrodeposition Process

Abstract

In this work, the one step electrodeposition process was used to prepare Ag-In-Se thin films. The films were deposited at room temperature from a bath containing 1-3x10-3 M AgNO 3 , 6x10-2 M InCl 3 and 3x10-2 M of H 2 SeO 3. The KSCN at a concentration of 0.681 M was used as complexing agent. The pH value of the solution was 1.4. Applied potentials to SCE were chosen between-0.3 V and-1.1 V. Films were deposited onto molybdenum/glass and ITO/glass substrates. We showed that the films' compositions are strongly function of the growth conditions. Heat treatment at 320 °C during 30 minutes under nitrogen led to AgInSe 2 chalcopyrite p-type semiconductor. Also, the morphology and crystallinity of the films is improved by annealing. AgInSe 2 films deposited on indium tin oxide showed a band gap value of about 1.24 eV.

Effect of annealing on thin film AgInSe2 solar cell

“…co-evaporation [11], sol-gel spin-coating technique [17]. reactive evaporation indicate that the incorporation [18], DC magnetron sputtering [19], chemical bath deposition [20], thermal evaporation with annealing [21], electrodeposition process [22], by Simple Chemical Method [23], hot-press method [24]. Bridgman technique [25].…”

Influence of Al dopant on structural and optical parameters of AgInSe2 thin film

“…sol-gel spin-coating technique [6]. chemical bath deposition [8], electrodeposition process [9], reactive evaporation indicate that the incorporation [10], DC magnetron sputtering [11], pulsed electrodeposition technique [12] thermal evaporation with annealing [13], by Simple Chemical Method [14], thermal evaporation with different ion uences [15]. Bridgman technique [16] hybrid sputtering/evaporation process [17].…”

Enhancing the optoelectronic properties of solution-processed AgInSe2 thin films for application in photovoltaics

“…Different values have been reported in the literature for the bandgap of AgInSe 2 ranging between 1.02 to 1.35 eV depending on the growth method and processing conditions. 20,24,25,27,28,30,42–47 However, the photoluminescence for our film is centered at 1.25 eV with a narrow FWHM of 59 meV, shown in Fig. 3d.…”