“…4b). In contract to the WB of design 2, which was prepared by using of implanted piezoresistors, WB structures of design 1 were anisotropically created using ICP DRIE process utilizing O 2 and SF 6 as etch gases at a cryogenic temperature (Sentech Instruments GmbH, Germany; Wasisto et al, 2012Wasisto et al, , 2013Wasisto et al, , 2014. In this case, an etching parameter set of an ICP power of 500 W, a high-frequency power of 6 W, an O 2 flux of 7 sccm (sccm is standard cubic centimeter per minute) and an SF 6 flux of 129 sccm at −80 • C was utilized (Fig.…”