Al‐, Ga‐, and In‐doped ZnO thin films via aerosol assisted CVD for use as transparent conducting oxides

Abstract

Al‐, Ga‐, and In‐doped ZnO thin films were deposited on glass substrates by aerosol assisted chemical vapour deposition (AACVD) at a deposition temperature of 450 °C. The air‐stable compound zinc acetylacetonate [Zn(acac)2] was used as a Zn source, whilst for the dopants of Al, Ga and In, the corresponding trichloride was used. Methanol solutions of the metal salts were used as precursor solutions and N2 carrier gas was used for the aerosol. Films were grown in approximately 30 min and were synthesised using dopant values of 5, 10, 15 and 20 mol.% (with respect to the Zn) in the precursor solution. XRD analysis showed that the films were wurtzite ZnO. XPS analysis confirmed the presence of the dopants in the films. Several of the films showed high transparency (>80%) in the visible range, and low resistivity (∼10−3 Ω cm).

The effect of solvent on Al-doped ZnO thin films depositedviaaerosol assisted CVD

“…I Film synthesis AACVD depositions were performed as detailed in previous work. [17][18][19] Nitrogen (99.99%, BOC, Surrey, UK) was used as the carrier gas. All chemicals were obtained from Sigma Aldrich (Dorset, UK), and were used as purchased, without further purication.…”

“…This was done because previous work has shown that 10 mol% AZO deposited via AACVD had superior electrical conductivities, compared to other dopant concentrations. 17 The substrate used was a 3.2 mm thick oat glass plate (Pilkington Technology Management Limited, Lancashire, UK), which was precoated with a 50 nm thick SiO 2 barrier layer. This was necessary to prevent leeching of ions between the substrate and the lm.…”

Photocatalytic and electrically conductive transparent Cl-doped ZnO thin films via aerosol-assisted chemical vapour deposition

“…[8][9][10][11][12] Doping is a strategy to enhance the electrical conductivity of TCO materials. Cation dopants such as Al 3+ , Ga 3+ , In 3+ , [13][14][15][16][17][18][19] Sc 3+ , 20 Si 4+ (ref. 21 and 22) and Cu 23 and anion dopants such as F À , 16,24,25 Cl À (ref.…”

Metal β-diketoiminate precursor use in aerosol assisted chemical vapour deposition of gallium- and aluminium-doped zinc oxide

“…The resultant films showed transparency greater than 80% and resistivities in the order of 10 -3 Ωcm. [18] Earlier this year both Al (1.5 at.%) and Ga (1.5 at.%) doped ZnO powders and thin films (produced via AACVD) were also reported with resistivity values of 5.6 × −4 Ωcm and 5.7 × 10 −3 Ωcm, respectively using a microwave assisted synthesis. [19] In both of these reports, where commercially available precursors were used, carbon and/or chlorine contamination was reported in the resultant materials.…”