Photocatalytic and electrically conductive transparent Cl-doped ZnO thin films via aerosol-assisted chemical vapour deposition

Abstract

Cl-doped ZnO films, grown via aerosol-assisted CVD, can function as both TCOs and photocatalysts.

Heterojunction α‐Fe2O3/ZnO Films with Enhanced Photocatalytic Properties Grown by Aerosol‐Assisted Chemical Vapour Deposition

“…XPS depth profiling was carried out by bombarding the films with Ar + ion beam to etch the surface for 500 to 35 000 s. The obtained spectra were deconvoluted by using CasaXPS software and the background was corrected by using the Shirley method. The C 1s peak of 284.5 eV was used as a reference to calibrate binding energy . A PerkinElmer Lambda 950 UV/Vis/NIR Spectrophotometer was used to investigate the optical properties.…”

“…The C1sp eak of 284.5 eV was used as ar eference to calibrate binding energy. [40] AP erkinElmer Lambda 950 UV/Vis/NIR Spectrophotometer was used to investigate the optical properties. Transmittance and reflectance spectra were collected with the range of 250-2500 nm.…”

n-Type conducting P doped ZnO thin films via chemical vapor deposition

“…Compares with some other doped ZnO thin films through AACVD from the same Zn precursor6,[48][49][50] …”

Scalable Production of Ambient Stable Hybrid Bismuth‐Based Materials: AACVD of Phenethylammonium Bismuth Iodide Films**

“…[PEA] 3 [Bi 2 I 9 ] thin film via AACVD : Thin films were deposited using a single‐inlet reactor described previously. [91] The precursor solution was prepared dissolving 1.180 g of BiI 3 (2.00 mmol, Sigma‐Aldrich) and 0.748 g of phenethylammonium iodide (3.00 mmol) in 5 mL anhydrous dimethylformamide (VWR) in a Schlenk flask equipped with a magnetic stirrer under N 2 atmosphere, after which it was sonicated for 1 h. N 2 was used as carrier gas for all depositions, with a flow rate of 0.8 L.min −1 . Films were deposited on Pilkington® barrier glass substrates, TiO 2 ‐coated barrier glass, and Pilkington® FTO substrates at 125 °C.…”