Al<i>x</i>Ga1−<i>x</i>As–GaAs metal–oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs

Chen, E. I.; Holonyak, N.; Maranowski, S. A.

doi:10.1063/1.113489

Cited by 89 publications

(46 citation statements)

References 8 publications

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“…An explanation for this could be that in general, AlGaAs is more readily oxidized than GaAs. This hypothesis is supported by various reports in the literature demonstrating that the oxidation of AlGaAs is significantly accelerated with increasing Al content [41,42], since the oxidation of AlAs compared to GaAs is more thermodynamically favorable [43]. This is attributed to the extreme reactivity of Al and its tendency to form various oxygen-rich compounds [44].…”

Section: '_i_supporting

confidence: 75%

Electrical degradation mechanisms of RF power GaAs PHEMTs

Villanueva

Alamos

Hisaka³

et al.

IEEE International Electron Devices Meeting 2003

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GaAs Pseudomorphic High-Electron Mobility Transistors (PHEMTs) are widely used in RF power applications. Since these devices typically operate at high power levels and under high voltage biasing, their electrical reliability is of serious concern. Previous studies have identified several distinct degradation phenomena in these devices, but a complete picture has yet to be formed.In this study, we have carried out a comprehensive study of the mechanisms of electrical degradation on a set of experimental RF power GaAs PHEMTs (non-commercial devices provided by our sponsor, Mitsubishi Electric). A wide variety of electrical stressing experiments employing different conditions (varying temperature, bias, environment) were performed on these devices in order to monitor their degradation with stressing.Our general observations showed several forms of degradation, the most concerning being an increase in the drain resistance RD and a reduction in maximum drain current Ima. Contrary to what is often claimed in the literature, our experiments indicated that these forms of degradation were not driven by impact-ionization or hot-electron effects. Instead, we found the degradation to be strongly correlated with temperature, stressing environment, and drain-gate bias, which were all consistent with a corrosion mechanism. Via materials analysis we were able to confirm that the degradation of both RD and I,., were due to surface corrosion on the drain side of the device, albeit at different specific locations. The increase in RD was attributed to oxidation on the n+GaAs ledge, while the reduction in I, was due to oxidation on the AlGaAs surface, closer to the gate.A recoverable negative shift in the threshold voltage VT and a permanent decrease in Rs were also observed during electrical stressing. The shift in VT was attributed to field-assisted tunneling of electrons out of traps under the gate, while the decrease in Rs was found to be consistent with recombination-induced annealing of defects on the source side of the device.

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Section: '_i_supporting

confidence: 75%

Electrical degradation mechanisms of RF power GaAs PHEMTs

Villanueva

Alamos

Hisaka³

et al.

IEEE International Electron Devices Meeting 2003

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“…They are also being considered for the gate material in field effect transistors (FET) [4]. In spite of the growing importance of these native oxides, there are several issues that complicate their use, including mechanical stability and fabrication reproducibility.…”

Section: Introductionmentioning

confidence: 99%

Comparison of AlGaAs Oxidation in MBE and MOCVD Grown Samples

et al. 2001

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Simultaneous wet-thermal oxidation of MBE and MOCVD grown AlxGal_xAs layers (x = 0.1 to 1.0) showed that the epitaxial growth method does not influence the oxidation rate. Nearly identical oxidation depths were measured for samples grown by both techniques. It was found, however, that the oxidation rate is very sensitive to non-uniformities in the Al concentration in the AlxGaixAs layers, and that maintaining consistent and uniform Al concentrations is critical to achieving reproducible oxidation rates. The study also showed that the oxidation rate was not affected by the V/Ill ratio during growth nor by impurities at concentrations less than or equal to 10 ppm. INTRODUCTIONNative oxides formed by wet-thermal oxidation of AlxGa _xAs are playing increasingly important roles in optoelectronic devices such as vertical cavity surface emitting lasers (VCSELs) [1, 2, 3]. They are also being considered for the gate material in field effect transistors (FET) [4]. In spite of the growing importance of these native oxides, there are several issues that complicate their use, including mechanical stability and fabrication reproducibility.The multi-layers for VCSEL devices are fabricated by molecular beam epitaxy (MBE) [5,6] or metal organic chemical vapor deposition (MOCVD) [7, 8]. The MBE-grown A1GaAs layers are sometimes pseudo or digital alloys, rather than the random alloys grown by MOCVD. Specifically, the MBE layers are made up of very thin (0.5 to 6 nm) alternating layers of AlAs and AIGaAs or GaAs rather than a single true AIGaAs. Other differences between these growth techniques are that MBE uses solid sources for growth under ultra high vacuum, while MOCVD uses organic precursors at pressures close to ambient. The purpose of this study is to investigate how these two growth methods and different growth systems affect the wet-thermal oxidation of A1GaAs. The effects of V/IlI ratio during growth and impurity concentrations on the oxidation rate are also reported.

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“…Threshold currents below 10 PA and threshold voltages only 50 meV above the emitted photon energy have been obtained [2] Wet-oxide-based VCSELs have even demonstrated greater than 50% wall-plug efficiency [3]. The wet oxidation process is also being studied for electronic applications such as gallium-arsenide-on-insulator (GOI) mete1 semiconductor field effect transistors (MESFETs) [4] and metal-insulator-semiconductor field effect transistors (MISFETs) [5]. If such devices are to go beyond laboratory demonstration to widespread commercial availability, it is imperative to understand the many factors that influence the extent of oxidation in a particular device and the influence of wet oxidation on relevant device properties.…”

Section: Introductionmentioning

confidence: 99%

Dynamics of Wet Oxidation of High-Al-Content III-V Materials

Ashby

1998

MRS Proc.

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Oxidation of layers of high-Al-content In-V materials by water vapor has become the enabling process for high-efficiency vertical cavity surface emitting lasers (VCSELs) and has potential applications for reducing substrate current leakage in GaAs-on-insulator (GOI) MESFETs. Because of the established importance of wet oxidation in optoelectronic devices and its potential applications in electronic devices, it has become increasingly important to understand the mechanism of wet oxidation and how it might be expected to affect both the fabrication and subsequent operation of devices that have been made using this technique. The mechanism of wet oxidation and the consequence of this mechanism for heterostructure design and ultimate device operation are discussed here.

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AlxGa1−xAs–GaAs metal–oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs

Cited by 89 publications

References 8 publications

Electrical degradation mechanisms of RF power GaAs PHEMTs

Electrical degradation mechanisms of RF power GaAs PHEMTs

Comparison of AlGaAs Oxidation in MBE and MOCVD Grown Samples

Dynamics of Wet Oxidation of High-Al-Content III-V Materials

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