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A new form of AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure (QWH) laser that is confined above and below the active region by an insulating low refractive index native oxide is demonstrated. The laser diodes are defined from a mesa edge by the selective lateral oxidation and anisotropic oxidation of high Al composition AlyGa1−yAs layers (y=0.85, 0.87) located above and below the QW and waveguide active region. This structure provides excellent current and optical confinement, resulting in continuous wave threshold currents of ∼8 mA and maximum output powers (uncoated laser) of 35 mW/ facet for a∼2.5 μm aperture.

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Oxygen incorporation in Al y In 1-y P (y ~ 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH 3 flow, growth temperature, and alloy composition. Both O 2 and diethylaluminum ethoxide (DEAlO) were employed as sources of oxygen. The incorporation of oxygen was found to be a superlinear function of O 2 or DEAlO flow. When multiple sources of oxygen are present, a surface interaction leads to enhanced oxygen incorporation. Oxygen incorporation cannot be adequately described by a simple dependence on growth temperature or V/III ratio due to strong interactions between these variables. In Mg-doped AlInP co-doped with oxygen, the incorporation of both Mg and O is strongly affected by an interaction between the two species, and roughly 10% of the oxygen atoms act as compensating donors.

Data are presented demonstrating edge-emitting laser diode operation of AlyGa1−yAs– GaAs–InxGa1−xAs quantum well heterostructures modified by the formation of a buried native-oxide distributed Bragg reflecting (DBR) mirror adding vertical confinement to the longitudinal laser cavity. The bottom DBR mirror, combined with the highly reflective top p-contact metallization (Ag), forms a thin broadband vertical cavity. The auxiliary vertical mirrors are tuned to improve the coupling of the spontaneous emission to the longitudinal lasing mode, resulting in reduced threshold currents and modified emission characteristics below threshold.