Edge-emitting quantum well heterostructure laser diodes with auxiliary native-oxide vertical cavity confinement

Evans, P.; Holonyak, N.; Maranowski, S. A.; Chen, E. I.

doi:10.1063/1.115151

Cited by 11 publications

(8 citation statements)

References 4 publications

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Section: Photon Recycling In Optoelectronic Applicationsmentioning

confidence: 99%

“…As a result, the auxiliary vertical mirrors are tuned to improve the coupling of the spontaneous emission to the longitudinal lasing mode, resulting in reduced threshold currents and modified emission characteristics below threshold. [ 123 ] In addition, as already discussed in Section 4.1 , PR plays an important role in modulating lasing wavelength in semiconductor nanowires that have potential applications as micro/nanoscale lasers in integrated nanophotonics. [ 103 , 106 , 109 ] Besides the aforementioned examples, the study of PR in lasers is relatively limited despite the potential benefits in controlling spontaneous emission.…”

Section: Photon Recycling In Optoelectronic Applicationsmentioning

confidence: 99%

mentioning

confidence: 99%

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Photon Recycling in Semiconductor Thin Films and Devices

Cheng

O’Carroll

2021

Advanced Science

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Photon recycling (PR) plays an important role in the study of semiconductor materials and impacts the properties of their optoelectronic applications. However, PR has not been investigated comprehensively and it has not been demonstrated experimentally in many different kinds of semiconductor materials and devices. In this review paper, first, the authors introduce the background of PR and describe how this phenomenon was originally identified in semiconductors. Then, the theory and modelling of PR is reviewed and some of the important parameters that are used to quantify PR are highlighted. Next, a variety of the methods used to achieve and characterize PR in materials and devices are discussed. Examples of how the performance parameters of different types of optoelectronic devices are affected by PR are described. Finally, a summary of the roles of PR in semiconductor materials and devices and an outlook on how PR can be used to solve existing problems and challenges in the field of optoelectronics are provided. From this review, it is apparent that PR can have a positive impact on optoelectronic device performance, and that further in‐depth theoretical and experimental studies are needed to rigorously demonstrate the advantages and importance of PR.

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Section: Photon Recycling In Optoelectronic Applicationsmentioning

confidence: 99%

Section: Photon Recycling In Optoelectronic Applicationsmentioning

confidence: 99%

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Photon Recycling in Semiconductor Thin Films and Devices

Cheng

O’Carroll

2021

Advanced Science

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“…A nonresonant ͑detuned͒ cavity has been used previously in stripe edge-emitting lasers to reduce mode volume and enhance coupling of spontaneous emission to the lasing mode. 6 In the present work the vertical direction of the cavity is resonant ͑tuned͒ with a lower native-oxide-based Al x O y /GaAs DBR, and an upper SiO 2 /Si DBR. Current is provided from the top by a reversed-biased tunnel contact junction allowing low-loss lateral electron currents to supply hole injection 7,8 through a native-oxide-defined aperture.…”

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confidence: 99%

Transition from edge to vertical cavity operation of tunnel contact AlGaAs–GaAs–InGaAs quantum well heterostructure lasers

Wierer

Evans

Holonyak

1998

Applied Physics Letters

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Al x Ga 1−x As–GaAs–In y Ga 1−y As quantum well heterostructure lasers with thin sharply defined cavities that operate longitudinally or vertically are demonstrated. Longitudinally, the cavity is defined by cleaving (edge emission) while vertical definition is provided by a lower AlxOy/GaAs distributed Bragg reflector (DBR) and an upper SiO2/Si DBR that form a resonant structure. A reverse-biased tunnel contact junction provides lateral electron current to support hole injection through a native-oxide-defined aperture. This ultrathin cavity configuration produces low threshold high efficiency (η∼91%, L=140 μm) edge emission (longitudinal operation) in the case of long lasers (L≳90 μm), and vertical emission for shorter lasers (L≲65 μm). The transition from longitudinal to vertical laser operation as a function of cavity length, L, is demonstrated.

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“…Spontaneous light is used more efficiently in highly defined thin cavities 7 as demonstrated by more efficient LEDs 8 and edge-emitting lasers with high spontaneous efficiencies. 9,10 Although VCSELs with Al x O y /GaAs DBRs have been demonstrated previously, 11 the thick conducting layers employed have resulted in a large cavity size.…”

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confidence: 99%

Vertical cavity surface emitting lasers utilizing native oxide mirrors and buried tunnel contact junctions

Wierer

Evans

Holonyak

et al. 1998

Applied Physics Letters

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Vertical cavity surface emitting lasers ͑VCSELs͒ are demonstrated with high-index-contrast native-oxide-based (Al x O y) distributed Bragg reflectors ͑DBRs͒ on both sides of a ''2'' cavity, thus creating a compact ͑thin, ϳ2.8 m͒ laser structure. Selective oxidation of high Al composition Al x Ga 1Ϫx As layers yields a structure with a four period upper Al x O y /GaAs DBR, a 5.5 period lower Al x O y /GaAs DBR, and a buried oxide current aperture. A reverse-biased tunnel contact junction provides hole injection via lateral electron current between the upper DBR and the oxide aperture layer. These VCSELs operate with submilliampere thresholds, high spontaneous efficiencies, and excellent polarization control.

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Edge-emitting quantum well heterostructure laser diodes with auxiliary native-oxide vertical cavity confinement

Cited by 11 publications

References 4 publications

Photon Recycling in Semiconductor Thin Films and Devices

Photon Recycling in Semiconductor Thin Films and Devices

Transition from edge to vertical cavity operation of tunnel contact AlGaAs–GaAs–InGaAs quantum well heterostructure lasers

Vertical cavity surface emitting lasers utilizing native oxide mirrors and buried tunnel contact junctions

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