Articles you may be interested inEffects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors Appl. Phys. Lett. 102, 093505 (2013); 10.1063/1.4794846 Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor fieldeffect transistors Appl. Phys. Lett. 99, 072117 (2011); 10.1063/1.3627186 Generation-recombination low-frequency noise signatures in GaAs metal-semiconductor field-effect transistors on laterally oxidized AlAs Summary Abstract: Electronic subbands and high field transport in Al x Ga1−x As/GaAs multilayers for superlattice modulationdoped fieldeffect transistors J. Vac. Sci. Technol. B 5, 779 (1987); 10.1116/1.583749Application of xray lithography for manufacturing a metaloxide semiconductor fieldeffect transistor tetrode