1993
DOI: 10.1063/1.109621
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AlGaAs/GaAs buried quantum well laser diodes by one time selective metalorganic chemical vapor deposition growth on dielectric window stripes

Abstract: Published by the AIP Publishing Articles you may be interested inGrowth of GaAs/AlAs trenchburied multiple quantum wires by metalorganic chemical vapor deposition on Vgrooved substrates Extremely smooth AlGaAsGaAs quantum wells growth by metalorganic chemical vapor deposition AIP Conf. Proc. 240, 96 (1991); 10.1063/1.41381 Nonlinear absorption in AlGaAs/GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition Appl. Phys. Lett. 50, 1182 (1987); 10.1063/1.97904 Doublet state of reson… Show more

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Cited by 5 publications
(2 citation statements)
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“…A ridge waveguide LD with a quasi-BH structure was obtained by selective metalorganic chemical vapor deposition (MOCVD) on dielectric window stripes. 5) The orientation dependence of crystal growth led to the formation of a trapezoidal cross section with thin sidewalls, and a low-capacitance optical waveguide and a carrier confinement structure were realized at the same time.…”
Section: Introductionmentioning
confidence: 99%
“…A ridge waveguide LD with a quasi-BH structure was obtained by selective metalorganic chemical vapor deposition (MOCVD) on dielectric window stripes. 5) The orientation dependence of crystal growth led to the formation of a trapezoidal cross section with thin sidewalls, and a low-capacitance optical waveguide and a carrier confinement structure were realized at the same time.…”
Section: Introductionmentioning
confidence: 99%
“…In contrast, the BH structure has a merit in low threshold current operation with the expense of multiple re-growth steps to form a laser stripe and current blocking layers. A ridge waveguide LD with quasi-BH structure was demonstrated by the selective metalorganic chemical vapor deposition (MOCVD) on dielectric window stripes 5) . Orientation dependence of the crystal growth formed a trapezoidal cross section with thin sidewalls, and a low capacitance optical waveguide and carrier confinement structure were realized at the same time.…”
Section: Introductionmentioning
confidence: 99%