AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

Kipshidze, G.; Kuryatkov, V.; Borisov, B.; Holtz, M.; Nikishin, S.; Temkin, H.

doi:10.1063/1.1480886

Cited by 77 publications

(65 citation statements)

References 20 publications

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“…1,2 However, up to now the research focus has primarily been GaN, ternary InGaN, AlGaN, and quaternary AlInGaN alloys with optical transitions in the 280-550 nm range. [3][4][5] Molecular beam epitaxy or metalorganic chemical vapor deposition ͑MOCVD͒ techniques were primarily used to grow the studied high-quality films and quantum structures on substrates such as sapphire, SiC, or bulk GaN. To push the optical emission/detection wavelength to the deep UV region (xр280 nm) high-quality Al x Ga 1Ϫx N alloys with Al-mole fractions in excess of x ϭ0.5 are needed.…”

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confidence: 99%

Near-band-edge photoluminescence of wurtzite-type AlN

Kuokštis

Zhang

Fareed

et al. 2002

Applied Physics Letters

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Temperature-dependent photoluminescence (PL) measurements were performed for A-plane and C-plane bulk AlN single crystals and epitaxial layers on sapphire. A strong near-band-edge (NBE) emission and deep-level luminescence were observed. At low excitations, the emission spectra are dominated by free and bound excitonic transitions and their LO-phonon replicas. At high excitations, the broadening and redshift of the NBE band is attributed to dense electron–hole plasma formation. The PL spectra differences of bulk single crystals and epilayers is explained by the electron–hole plasma expansion peculiarities.

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confidence: 99%

Near-band-edge photoluminescence of wurtzite-type AlN

Kuokštis

Zhang

Fareed

et al. 2002

Applied Physics Letters

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“…In the active region of the device, consisting of five undoped barrier/well pairs and placed between n-and p-regions, the well thickness was increased to 0.75 nm to increase the electroluminescence efficiency [5]. These thicknesses are below the critical layer thickness [11].…”

Section: Introductionmentioning

confidence: 99%

“…Our recent work has shown that diodes based on superlattices (SLs) of AlN/AlGaInN can be used to produce both LEDs with light emission down to 280 nm [5] and photodetectors with sensitivity edge near 260 nm [9]. This is accomplished using SLs of AlN and AlGaInN with extremely small well and barrier thicknesses.…”

Section: Introductionmentioning

confidence: 99%

“…High performance UV photodetectors having responsivity below2 80 nm would be highly useful because they would not respond to the visible solar spectrum, i.e., they would be solar-blind. The most promising material for achieving high performance at short wavelength is the Al x Ga 1-x N alloy system [1][2][3][4][5], which can be grown epitaxially in the wurtzite structure across the full composition range [6].…”

Section: Introductionmentioning

confidence: 99%

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Preparation of Optoelectronic Devices Based on AlN/AlGaN Superlattices

et al. 2002

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We present results on growth and fabrication experiments of AlN/AlGaN superlattices for ultraviolet (UV) optoelectronic devices. Superlattices with extremely short periods have been studied. The AlN "barrier" layers are 0.5 nm thick, and the Al x Ga 1-x N "wells" are 1.25 nm thick, with x~0.08. This combination gives an average AlN mole fraction of 0.63 across one full period. The superlattice periods, AlN mole fractions, and energy gaps are determined using TEM, X-ray diffraction, and optical reflectance. They are all consistent with each other. For device fabrication, p-i-n structures are grown doped with Si (n-type) and Mg (p-type). The acceptor activation energy of~0.2 eV is found. Mesa structures are plasma etched using chlorine chemistry. Etch rates of AlN are~1/3 those of GaN under identical circumstances. Etch rates of 250 nm/min are used for the device structures. A light emitting diode, with primary emission at 280 nm is reported, and a detector with sensitivity edge at 260 nm are reported.

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“…[1][2][3][4] For such devices, AlGaN is the most suitable material where the emission wavelength can be tuned from 365 to 200 nm as the Al content increases. However, to realize high-efficiency DUV-LEDs, several challenges are still awaiting for us.…”

Section: Introductionmentioning

confidence: 99%

Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs

Yang

Lin

et al. 2013

AIP Advances

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Dense and atomically flat AlN film with root-mean-square roughness value of 0.32 nm was grown on sapphire substrate at a relatively lower temperature by using a three-step epitaxy technique. On the basis of this AlN template, AlGaN-based multiple quantum wells (MQWs) with atomically flat hetero-interfaces were epitaxially grown to suppress nonradiative recombination by introducing In as a surfactant during simultaneous source supply. As a result, single intense- and narrow-peaked photoluminescence was obtained from the MQWs. Finally, the deep ultraviolet light emitting diodes with well-behaved I-V characteristic and strong electroluminescence in the range of 256–312 nm were fabricated successfully

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AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

Cited by 77 publications

References 20 publications

Near-band-edge photoluminescence of wurtzite-type AlN

Near-band-edge photoluminescence of wurtzite-type AlN

Preparation of Optoelectronic Devices Based on AlN/AlGaN Superlattices

Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs

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