AlGaInP strained multiple-quantum-well visible laser diodes ( lambda /sub L/&amp;gt;or=630 nm band) with a multiquantum barrier grown on misoriented substrates

Hamada, Hiroki; Hiroyama, R.; Honda, S.; Shono, Masayuki; Yodoshi, K.; Yamaguchi, Takao

doi:10.1109/3.234442

Cited by 33 publications

(7 citation statements)

References 26 publications

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“…One set of substrates was cut in the [1 0 0] direction within accuracy of 70.5 (supplier's specification). The other set of wafers was deliberately misorientated 10 towards the directions [1 1 0], [1 1 1]A, or ½1 % 1 0: For the purpose of brevity, these samples will subsequently be referred to as (1 0 0)-0 , 10 -[1 1 0], 10 -[1 1 1]A, and 10 -½1 % 1 0: We chose this tilt angle because similar angles are regularly used for MOCVD-growth of wide-gap phosphides [4][5][6].…”

Section: Methodsmentioning

confidence: 99%

“…The substrates are cut a few degrees off the [1 0 0] direction [4][5][6], because the resultant stepped-like surfaces enhance photoluminescence (PL) and reduce the degree of alloy order, especially Cu-Pt type ordering in the Alcontaining group-III sub-lattice. Alloy ordering causes a remarkable, undesired spectral red-shift up to 100 meV [5,7].…”

Section: Introductionmentioning

confidence: 99%

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Photoluminescence from GaInP layers and GaInP/AlGaInP quantum wells grown by molecular beam epitaxy with varying growth temperature, phosphorus gas pressure, and substrate orientation

Toikkanen

Leinonen

Tukiainen

et al. 2004

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Photoluminescence from GaInP layers and GaInP/AlGaInP quantum wells grown by molecular beam epitaxy with varying growth temperature, phosphorus gas pressure, and substrate orientation

Toikkanen

Leinonen

Tukiainen

et al. 2004

Journal of Crystal Growth

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“…Electron leakage imposes limits on the short-wavelength and high temperature operation of AlGalnP laser diodes [1][2][3][4][5][6][7][8][9]. While strained QW active regions represent a great improvement over unstrained DH lasers, electron confinement is still an important issue.…”

Section: Short-wavelength Limitsmentioning

confidence: 99%

“…Indeed, in many respects the performance of 680 nm AlGalnP lasers now matches that of AIGaAs laser diodes. Extending the operation of AlGalnP lasers to short wavelengths (A<640 nm) is difficult, however, because ofthe relatively weak electron confinement afforded by (AIGa)o.slno.5P heterostructures [1][2][3][4][5][6][7][8][9]. The beneficial effects of biaxial strain (both compressive and tensile) have led to a sizeable reduction in the threshold current of 600-nm band AIGalnP QW laser diodes [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

AlGaInP single quantum well laser diodes

Bour¹,

Treat²,

Beernink³

et al. 1995

UV and Visible Lasers and Laser Crystal Growth

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The properties and low pressure organometallic vapor phase epitaxy of GaIn1..P/(AIGa)o.5Ino.5P quantum well (QW) laser diode heterostructures with Al05ln0.5P cladding layers, and having wavelength 614660 nm), threshold current densities under 200 A/cm2 and efficiencies greater than 75% result from a biaxially-compressed GalnP QW active region. Although short wavelength laser performance is diminished by the poor electron confinement afforded by AlGalnP heterostructures, good 630 nm band performance is achieved with strained, single QW active regions. The wavelength range may also be expanded into the previously difficult 700-nm band, by including lnGaAsP or AIGaAsP QWs. INTRODUCTiON(AlGa)0.5ln0,5P is a high-bandgap Ill-V alloy that is lattice-matched to GaAs substrates, and which is used in 600 nm band laser diodes and LEDs. Continuous-wave (cw), roomtemperature AIGalnP double heterostructure (DH) lasers were first demonstrated in 1 985, at the Japanese Laboratories of NEC, Sony, and Toshiba. More recently, quantum well (QW) heterostructures have led to greatly reduced threshold current densities, especially for strained QWs. Indeed, in many respects the performance of 680 nm AlGalnP lasers now matches that of AIGaAs laser diodes. Extending the operation of AlGalnP lasers to short wavelengths (A<640 nm) is difficult, however, because ofthe relatively weak electron confinement afforded by (AIGa)o.slno.5P heterostructures [1-9]. The beneficial effects of biaxial strain (both compressive and tensile) have led to a sizeable reduction in the threshold current of 600-nm band AIGalnP QW laser diodes [7-9]. Consequently, new applications are being addressed, for example those requiring shorter wavelengths or very high power. PROPERTIES OF (AlGa)o.5lno.5PThe bandgap of (AIXGa1.X)o.51n0.5P is direct for and ranges from 1 .9 eV (for Gao.51n0.5P) to about 2.3 eV (for [Alo.7Gao.3]o.5lno.5P). For x>0.7, the bandgap is indirect and increases very slowly with composition, to about 2.35 eV for Al05ln05P. Compared to AIGaAs, other disting uishing properties of (AIGa)o.5lno.5P heterostructures are difficulties with p-doping, very low hole mobility, and high thermal resistivity. The carrier effective masses are also greater in AlGälnP than in AIGaAs. This translates into a greater density of carrier states, and therefore higher carrier concentrations at threshold.In lattice-matched Gao.5Ino.5P/(AlGal.)o.5lno.5P heterostructures, the direct (1) bandgap energy difference is split between the conduction band offset (E) and the valence band offset (E) in the ratio LiE/1XE=65/35 [101. The conduction band offset increases with the 236 ISPIE Vol. 2380 0-8194-1727-0/95/$6.00 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/23/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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“…Monochromatic laser light offers the largest available color saturation, but the wavelengths require a trade-off with the eye responsivity. Especially for red-emitting lasers the efficiency strongly depends on the wavelength [2,3,4,5]. It has been shown that for the red color diode lasers the optimum wavelength is in the region between 630 nm and 640 nm [6,7,8,9,10].…”

Section: Introductionmentioning

confidence: 99%

High luminance tapered diode lasers for flying-spot display applications

et al. 2012

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Flying-spot display applications require high luminance (> 100 TCd/m²) red-emitting lasers. High luminance is defined as a high optical output power and a nearly diffraction limited beam quality at a wavelength with a good visibility of the human eye. Diode lasers, with all their beneficial properties such as direct modulation capability, small size and good electro-optical efficiency, are so far unable to achieve such high luminance, due to catastrophic optical mirror damage (COMD) caused by high facet loads.We will present tapered diode lasers emitting near 635 nm with a larger vertical waveguide to lower the facet load and to alleviate the COMD risk. The lateral structure consists of an index-guided ridge waveguide section for lateral mode filtering, and a gain-guided tapered section for the amplification of radiation and a further reduction of the facet load. The tapered lasers are mounted p-side down on diamond heat spreaders and on copper heat sinks.We achieved an optical output power of 1.1 W at 636 nm at a laser temperature of 5°C. The emitted beam has a nearly diffraction limited (M 2 1/e² < 2) central lobe with a high power content (P CL > 75%). At 636 nm the eye sensitivity is 142 lm/W according to the CIE 1931 photopic eye response curve (v λ ). Hence, we achieved a luminous flux of > 100 lm and a luminosity of 150 TCd/m², thus taking a first step towards diode-laser-based flying-spot displays.

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AlGaInP strained multiple-quantum-well visible laser diodes ( lambda /sub L/>or=630 nm band) with a multiquantum barrier grown on misoriented substrates

Cited by 33 publications

References 26 publications

Photoluminescence from GaInP layers and GaInP/AlGaInP quantum wells grown by molecular beam epitaxy with varying growth temperature, phosphorus gas pressure, and substrate orientation

Photoluminescence from GaInP layers and GaInP/AlGaInP quantum wells grown by molecular beam epitaxy with varying growth temperature, phosphorus gas pressure, and substrate orientation

AlGaInP single quantum well laser diodes

High luminance tapered diode lasers for flying-spot display applications

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