AlGaN/GaN C-HEMT structures for dynamic stress detection

Vanko, G.; Držík, Milan; Vallo, Martin; Lalinský, T.; Kutiš, Vladimı́r; Stančík, Stanislav; Rýger, Ivan; Bencurova, A.

doi:10.1016/j.sna.2011.02.049

Cited by 22 publications

(10 citation statements)

References 10 publications

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“…AlGaN/GaN-based electronic devices can be effectively applied as sensing elements in such sensors. Recently, we have introduced an approach whereby the applied external dynamic force (or pressure) causes the change in a piezoelectrically induced charge between the electrodes of a high electron mobility transistor (Vanko et al 2011). However, the sensors described in (Vanko et al 2011) were all manufactured on bulk substrate materials (mainly SiC).…”

Section: Introductionmentioning

confidence: 99%

“…Recently, we have introduced an approach whereby the applied external dynamic force (or pressure) causes the change in a piezoelectrically induced charge between the electrodes of a high electron mobility transistor (Vanko et al 2011). However, the sensors described in (Vanko et al 2011) were all manufactured on bulk substrate materials (mainly SiC). Only a few published articles mention the possibilities to apply AlGaN/GaN membranes (grown on SiC substrate) as MEMS sensors.…”

Section: Introductionmentioning

confidence: 99%

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Manufacturing of membranes by laser ablation in SiC, sapphire, glass and ceramic for GaN/ferroelectric thin film MEMS and pressure sensors

et al. 2016

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Manufacturing of membranes by laser ablation in SiC, sapphire, glass and ceramic for GaN/ferroelectric thin film MEMS and pressure sensors

et al. 2016

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“…change in density of the two-dimensional electron gas (2DEG) [11] due to the piezoelectric nature of AlGaN/GaN heterostructures. Just this effect is used in applications of AlGaN/GaN HEMTs as MEMS pressures sensors [19,20]. Therefore, a thorough study of the influence of diamond deposition as well as the thermal behaviour of the diamond/GaN heterostructure on the induced stress is highly recommended before any applications of diamond-coated AlGaN/GaN heterostructures.…”

Section: Introductionmentioning

confidence: 99%

Temperature-dependent stress in diamond-coated AlGaN/GaN heterostructures

et al. 2016

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“…However, much of them were fabricated on bulk substrate materials [1], [2]. In order to improve their stability, sensitivity or efficiency, they should be integrated into micro-electro-mechanical-systems (MEMS).…”

Section: Introductionmentioning

confidence: 99%

“…But still the surface quality at the back side did not reach the same level as we had for ablation using only 350mW at 520nm wavelength. The SiC-sensor devices introduced in [1] and [2] were made in a variety of different shaped metallic electrode arrangements. Our intention to laser machine the sensor devices when the metallic layer of the electrode was already coated onto the AlGaN surface failed at all used laser wavelength.…”

Section: Introductionmentioning

confidence: 99%

Using of laser ablation technique in the processing technology of GaN/SiC based MEMS for extreme conditions

Zehetner

Vanko

Dzuba

et al. 2014

The Tenth International Conference on Advanced Semiconductor Devices and Microsystems

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In order to improve the stability, sensitivity or efficiency of AlGaN/GaN based sensors employing high electron mobility transistors (HEMTs), Schottky diodes and/or resistors they should be integrated into micro-electro-mechanical-systems (MEMS). The creation of appropriate diaphragms and/or cantilevers is necessary for the verification of sensing properties of such MEMS sensors. In this paper, we present possible approaches to improve the fabrication of micromechanic structures in bulk SiC substrates with epitaxial AlGaN/GaN heterostructures using femtosecond laser ablation to fabricate SiC diaphragms. The objective of this work is also to point at the backside damaging effects and to find an optimal method for its elimination or suppression. IntroductionAlGaN/GaN based high electron mobility transistors (HEMTs), Schottky diodes and/or resistors have been effectively presented as sensing devices for mechanical or chemical sensors operating at extreme conditions. However, much of them were fabricated on bulk substrate materials [1], [2]. In order to improve their stability, sensitivity or efficiency, they should be integrated into micro-electro-mechanical-systems (MEMS). Therefore, the creation of appropriate diaphragms and/or cantilevers is necessary for the verification of sensing properties of such MEMS sensors. Laser ablation can fabricate SiC diaphragms much faster than electrochemical, photochemical, or reactive ion etching (RIE). Recently, we presented the possibilities to combine laser ablation technique with RIE for bulk micromachining of SiC [3]. We demonstrated the feasibility to fabricate micromechanic structures in bulk SiC substrates with epitaxial AlGaN/GaN heterostructures (Fig. 1) by femtosecond laser ablation at 520nm wavelength for pressure sensor applications [4]. Using a 300μ 4H-SiC substrate we produced an array of 250μ deep and 500μ diameter blind holes without damaging of the AlGaN/GaN heterostructures (Fig. 2). Our laser system delivered 100kHz of 350fs pulses with an average power of 950mW in the fundamental (1040nm) and 350-380mW in the second harmonic (520nm) wavelength. The 350mW output power in the SH was already the minimum power required to drill the holes down to a depth of 250μ -300μ. Therefore we made tests also with the higher laser power output at 1040nm but this led to severe damage at the backside of the substrate (Fig. 3). Consequently, we investigated "two colour laser ablation" [5] to enhance the yield and improve the machining results. An effective back side damage reduction was obtained with respect to the results when only 1040nm were used. But still the surface quality at the back side did not reach the same level as we had for ablation using only 350mW at

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AlGaN/GaN C-HEMT structures for dynamic stress detection

Cited by 22 publications

References 10 publications

Manufacturing of membranes by laser ablation in SiC, sapphire, glass and ceramic for GaN/ferroelectric thin film MEMS and pressure sensors

Manufacturing of membranes by laser ablation in SiC, sapphire, glass and ceramic for GaN/ferroelectric thin film MEMS and pressure sensors

Temperature-dependent stress in diamond-coated AlGaN/GaN heterostructures

Using of laser ablation technique in the processing technology of GaN/SiC based MEMS for extreme conditions

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