AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination

Cordier, Y.; Adnane, M.; Baron, N.; Chenot, Sébastien; Tottereau, O.; Massies, J.

doi:10.1016/j.jcrysgro.2007.09.023

Cited by 31 publications

(15 citation statements)

References 16 publications

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“…with 9 μm thick GaN. Other groups have reported AlGaN/GaN HFETs with GaN:Fe underlying layer [9][10][11]. For example, Cordier et al have reported 3×150 μm gated HFETs grown by MBE on GaN:Fe/sapphire templates grown by MOVPE.…”

Section: Device Fabricationmentioning

confidence: 99%

AlGaN/GaN HFETs on Fe‐doped GaN substrates

Oshimura

Takeda

Sugiyama

et al. 2010

Phys. Status Solidi (c)

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AlGaN/GaN HFETs with different undoped GaN thicknesses were grown on Fe‐doped freestanding GaN substrates by conventional MOVPE. To realize a high drain current, thick undoped GaN is found to be necessary. SIMS measurement shows that Fe is redistributed into the epilayer, by which the scattering center is generated at the channel when the thickness of the undoped GaN is insufficient. We also observed a similar Fe profile in the GaN/sapphire template placed on the side of the Fe‐doped GaN substrate during growth. Therefore, Fe in the Fe‐doped GaN substrate is redistributed not only through a solid but also through vapor. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Device Fabricationmentioning

confidence: 99%

AlGaN/GaN HFETs on Fe‐doped GaN substrates

Oshimura

Takeda

Sugiyama

et al. 2010

Phys. Status Solidi (c)

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“…Studied devices are ungated GaN HEMT-like structures and their layers have been grown by molecular beam epitaxy and processed as described in [16]. As presented in Fig.…”

Section: Studied Structurementioning

confidence: 99%

Generation of THz radiation due to 2D-plasma oscillations in interdigitated GaN quantum well structures at room temperature

Penot¹,

Torres²,

Nouvel³

et al. 2014

Lith. J. Phys.

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We report on room temperature electrically-induced terahertz emission from interdigitated GaN quantum well structures. The emission spectrum has been analysed in a Michelson interferometer using a 4K-Si bolometer as a terahertz detector. A resonant peak at the frequency of around 3 THz was observed in emission spectra. A threshold behaviour of the resonance with respect to applied voltage takes place. By using the proposed analytical model the measured/observed experimentally resonant behaviour of emission spectra is interpreted as a result of ungated stream-plasma instability in the channel.

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“…Results are summarized in Tables I and II for 10 and 300 K temperatures, respectively. The layers are grown and processed as described in [14]. The devices are not passivated.…”

Section: Samples Under Studymentioning

confidence: 99%