AlGaN/GaN MISHEMT with hBN as gate dielectric

Gerbedoen, Jean-Claude; Soltani, A.; Mattalah, M.; Moreau, Myriam; Thévenin, Philippe; Jaeger, J.C. de

doi:10.1016/j.diamond.2009.02.018

Cited by 37 publications

(24 citation statements)

References 10 publications

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“…The presence of slow traps can be associated with the VO h-BN/GaN interface. The Dit for the slow traps related to the BN/GaN interface is comparable to the h-BN/GaN interface trap density reported elsewhere (~2×10 12 cm -2 eV -1 at EC-ET of 0.4 eV) using the PLS technique[101] on MW-PECVD deposited h-BN[91].…”

supporting

confidence: 84%

“…For example, in switching applications it is important to investigate the interface traps as they could degrade device switching properties through charging and discharging [90]. Although researchers have realized MISHEMTs with h-BN, [91]- [93] no interface properties have so far been reported for VO h-BN on AlGaN/GaN heterostructures.…”

Section: Gan Mishemt Using H-bn 41 Introductionmentioning

confidence: 99%

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Investigation of interface properties of h-BN and AlN on AlGaN/GaN heterostructures

Whiteside¹

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supporting

confidence: 84%

Section: Gan Mishemt Using H-bn 41 Introductionmentioning

confidence: 99%

Investigation of interface properties of h-BN and AlN on AlGaN/GaN heterostructures

Whiteside¹

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“… 8 Pairing h-BN with GaN resulted in the development of, inter alia, light emitting diodes (LEDs), 9 − 11 UV photodetectors, 12 , 13 and metal–insulator–semiconductor high-electron mobility transistors (MISHEMTs). 14 In the case of GaN-based light emitters, h-BN provides electron blocking and more efficient hole injection into the active region. For transistor structures, h-BN acts as a passivation layer and gate dielectric, neutralizing the surface traps and reducing the leakage current.…”

Section: Introductionmentioning

confidence: 99%

Toward h-BN/GaN Schottky Diodes: Spectroscopic Study on the Electronic Phenomena at the Interface

Zdanowicz

Herman

Opołczyńska

et al. 2022

ACS Appl. Mater. Interfaces

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Hexagonal boron nitride (h-BN), together with other members of the van der Waals crystal family, has been studied for over a decade, both in terms of fundamental and applied research. Up to now, the spectrum of h-BN-based devices has broadened significantly, and systems containing the h-BN/III-V junctions have gained substantial interest as building blocks in, inter alia, light emitters, photodetectors, or transistor structures. Therefore, the understanding of electronic phenomena at the h-BN/III-V interfaces becomes a question of high importance regarding device engineering. In this study, we present the investigation of electronic phenomena at the h-BN/GaN interface by means of contactless electroreflectance (CER) spectroscopy. This nondestructive method enables precise determination of the Fermi level position at the h-BN/GaN interface and the investigation of carrier transport across the interface. CER results showed that h-BN induces an enlargement of the surface barrier height at the GaN surface. Such an effect translates to Fermi level pinning deeper inside the GaN band gap. As an explanation, we propose a mechanism based on electron transfer from GaN surface states to the native acceptor states in h-BN. We reinforced our findings by thorough structural characterization and demonstration of the h-BN/GaN Schottky diode. The surface barriers obtained from CER (0.60 ± 0.09 eV for GaN and 0.91 ± 0.12 eV for h-BN/GaN) and electrical measurements are consistent within the experimental accuracy, proving that CER is an excellent tool for interfacial studies of 2D/III–V hybrids.

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“…As a gateinsulator of the MIS devices, high-dielectric-constant (high-k) oxide materials, such as Al 2 O 3 , 1 HfO 2 , 2,3 and also high-k nitride materials, such as AlN, 4-8 BN, 9,10 have been investigated. Owing to their high thermal conductivities, the nitride materials are favorable also for passivation of GaN-based devices, exhibiting good heat release properties.…”

Section: Introductionmentioning

confidence: 99%

Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

Shih

Kudo

Suzuki

2014

Journal of Applied Physics

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Articles you may be interested inModeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interface states Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequencytemperature mapping Appl. Phys. Lett. 101, 043501 (2012); 10.1063/1.4737876 Effects of interface states and temperature on the C -V behavior of metal/insulator/AlGaN/GaN heterostructure capacitorsWe present an analysis method for GaN-based metal-insulator-semiconductor (MIS) devices by using capacitance-frequency-temperature (C-f-T) mapping to evaluate the gate-control efficiency and the interface state density, both exhibiting correlations with the linear-region intrinsic transconductance. The effectiveness of the method was exemplified by application to AlN/AlGaN/GaN MIS devices to elucidate the properties of AlN-AlGaN interfaces depending on their formation processes. Using the C-f-T mapping, we extract the gate-bias-dependent activation energy with its derivative giving the gate-control efficiency, from which we evaluate the AlN-AlGaN interface state density through the Lehovec equivalent circuit in the DC limit. It is shown that the gatecontrol efficiency and the interface state density have correlations with the linear-region intrinsic transconductance, all depending on the interface formation processes. In addition, we give characterization of the AlN-AlGaN interfaces by using X-ray photoelectron spectroscopy, in relation with the results of the analysis. V C 2014 AIP Publishing LLC. [http://dx.

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AlGaN/GaN MISHEMT with hBN as gate dielectric

Cited by 37 publications

References 10 publications

Investigation of interface properties of h-BN and AlN on AlGaN/GaN heterostructures

Investigation of interface properties of h-BN and AlN on AlGaN/GaN heterostructures

Toward h-BN/GaN Schottky Diodes: Spectroscopic Study on the Electronic Phenomena at the Interface

Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

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