AlGaN/GaN Schottky Barrier Diodes on Silicon Substrates With Selective Si Diffusion for Low Onset Voltage and High Reverse Blocking

Lian, Yi-Wei; Lin, Yu‐Syuan; Yang, Jui-Ming; Cheng, Chih-Hsuan; Hsu, Shawn S. H.

doi:10.1109/led.2013.2269475

Cited by 77 publications

(30 citation statements)

References 14 publications

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“…Group III nitrides represented by GaN have a wide range of applications in optoelectronics and power electronics, which is considered to be one of the most important semiconductor materials after silicon. Owing to its superior material properties such as high electric breakdown field, high-electron saturation velocity, and high mobility in a readily available heterojunction 2-dimensional electron gas (2-DEG) channel [1]- [3], GaN has been widely used in high frequency and power electronic devices. Power electronic devices are one of the fundamental components in almost all electronic manufacturing industries, including the field of consumer electronics, wireless communications and industrial control.…”

Section: Introductionmentioning

confidence: 99%

1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse p-n Junction Termination

Chen

Liu

et al. 2020

IEEE J. Electron Devices Soc.

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In this paper, we demonstrate high-performance quasi-vertical GaN-on-Sapphire Schottky barrier diodes (SBD) with a reverse GaN p-n junction termination (RPN). The SBD has a current output of 1 kA/cm 2 at V F = 2.5 V, a low V on of 0.66 V ± 0.017 V, a low R on,sp of 1.4 m •cm 2 , current ON/OFF ratio of over 10 9 (−3 V∼3 V). By introducing the RPN, the breakdown voltage can boost from 459 V to 1419 V, and power figure-of-merit (FOM) can reach 1438 MV/cm 2. It is shown that the presence of the RPN with a suitable anode recess depth can generate an electric field (EF) opposite to the built-in EF at the center of the second top p-n junction, which can decrease the EF peak intensity and make the electric field more uniformly distributed inside the device. Finally, the leakage current of the SBD is inhibited and the breakdown voltage is increased. INDEX TERMS Vertical GaN-on-Sapphire Schottky barrier diode, reverse p-n GaN junction, breakdown voltage, power FOM.

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Section: Introductionmentioning

confidence: 99%

1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse p-n Junction Termination

Chen

Liu

et al. 2020

IEEE J. Electron Devices Soc.

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“…The degradation of dynamic R ON,SP needs further work. Figure 10 presents the benchmark plot of BV versus R ON,SP for GaN power diode on Si/SiC/sapphire substrates [8,10,22,[25][26][27][28][29][30][31]. The proposed device with L AC…”

Section: Resultsmentioning

confidence: 99%

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

et al. 2020

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An AlGaN/GaN Schottky barrier diode (SBD) with double-heterojunction is theoretically and experimentally investigated on the GaN/AlGaN/GaN/Si-sub. The two-dimensional hole gas (2DHG) and electron gas (2DEG) are formed at the GaNtop/AlGaN and AlGaN/GaN interface, respectively. At the off-state, the 2DEH and 2DHG are partially depleted and then completely disappear. There remain the fixed positive and negative polarization charges, forming the polarization junction. Therefore, a flat electric field in the drift region and a high breakdown voltage (BV) are obtained. Moreover, the anode is recessed to reduce turn-on voltage (V ON). The low-damage ICP etching process results in the improved Schottky contacts, and a low leakgae current and a low V ON is obtained. The fabricated SBD exhibits a BV of 1109 V with anode-to-cathode distance (L AC) of 11 μm. The fabricated SBDs achieve a low V ON of 0.68 V with good uniformity, a high on/off current ratio ∼ 10 10 at room temperature, a low specific on-resistance (R ON,SP) of 1.17 mΩ cm 2 , and a high Baliga's figure-of-merit (FOM) of 1051 MW/cm 2 .

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“…The R on,sp and breakdown voltage characteristics of both devices are plotted in Fig. in comparison with other reported normally off GaN devices [].…”

Section: Resultsmentioning

confidence: 99%

High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiN _x MIS structure

Kang

Lee

Choi

et al. 2017

Phys. Status Solidi A

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Recessed MIS gate structures with SiNx gate dielectric layer were investigated for use in normally off AlGaN/GaN‐on‐Si high electron mobility transistors (HEMTs). The channel mobility and threshold voltage (Vth) instability were strongly affected by the recessed configuration. Employing a 30 nm SiNx gate dielectric layer composed of 6 nm PEALD and 24 nm ICP‐CVD films on a 2 nm AlGaN recessed barrier layer resulted in excellent electrical and dynamic characteristics with reduced effective interface trap density. A maximum drain current density of 590 mA mm−1, an on‐resistance of 0.75 mΩ · cm2, and a breakdown voltage of >1100 V were achieved for the gate‐to‐drain distance of 10 μm. Owing to the remaining AlGaN barrier layer under the recessed gate region of the partially recessed device, the interaction between MIS interface traps and channel electrons was suppressed effectively, resulting in improved channel mobility and Vth stability.

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AlGaN/GaN Schottky Barrier Diodes on Silicon Substrates With Selective Si Diffusion for Low Onset Voltage and High Reverse Blocking

Cited by 77 publications

References 14 publications

1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse p-n Junction Termination

1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse p-n Junction Termination

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiN _x MIS structure

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AlGaN/GaN Schottky Barrier Diodes on Silicon Substrates With Selective Si Diffusion for Low Onset Voltage and High Reverse Blocking

Cited by 77 publications

References 14 publications

1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse p-n Junction Termination

1.4-kV Quasi-Vertical GaN Schottky Barrier Diode With Reverse p-n Junction Termination

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiN x MIS structure

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Product

Resources

About

High-performance normally off AlGaN/GaN-on-Si HEMTs with partially recessed SiN _x MIS structure