Algorithm for evaluating layer thickness based on electron average energy shift analysis

Givon, A.; Tiferet, Eitan; Orion, Itzhak

doi:10.1016/j.nimb.2012.07.025

Cited by 4 publications

(3 citation statements)

References 24 publications

(39 reference statements)

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“…Also reliant on an algorithm for evaluating layer thickness, this new WES method is based on an average energy shift analysis of electrons that was developed by our group and published in 2012 [13]. The WES method exploits the attenuated electron peak counts in XPS (X-ray photoelectron spectroscopy) rather than use the signal electron peaks emitted from the sample (due to photon beam irradiation) and then calculate the mean electron energy loss.…”

Section: Wes (Wide Energy Spectrum) Methodsmentioning

confidence: 99%

Low-Atomic-Number Nanometric Film Production Method for keV Electron Scattering Measurements

Geller¹,

Orion²

2016

JCCE

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Attenuating mediums, targets and barriers made of submicronic layers with low average atomic number (low Z) and minimal electronic density that reduces the elastic scattering and absorption of radiation are required for many applications. This work describes the development and characterization of submicronic Lexan (Polycarbonate) polymer foils with low Z for two new electron inelastic mean free path assessment methods. Lexan layers with thicknesses of 120 nm to 240 nm were developed and fabricated using spin coating. The submicronic layers were characterized by AFM and CSI for thickness, roughness and levelness. Roughness was found to be 1.0-2.4 nm rms, and the change in total thickness was within ± 7.5%. The results of total current measurements using 177 nm Lexan foil irradiated under an SEM electron beam were compared to those for a similar polymer foil. The first step of a wide spectrum method experiment was performed at the ESRF using Lexan submicronic layers on a silicon substrate. The signal peak and the multiple inelastic scattering peak of the Lexan spectrum was similar to those previously measured on carbon films. This study supported the suitability of the developed Lexan films for electron scattering measurements.

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Section: Wes (Wide Energy Spectrum) Methodsmentioning

confidence: 99%

Low-Atomic-Number Nanometric Film Production Method for keV Electron Scattering Measurements

Geller¹,

Orion²

2016

JCCE

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“…While previous work focused on the interactions that occur during the process of the electrons' transport [33,34]. This study presents calculations of the electrons' energy deposition efficiency to the metal alloy using EGS5 simulations, which were validated by thermal experiments performed using an Arcam Q20+ machine (Arcam, Mölndal, Sweden).…”

Section: Introductionmentioning

confidence: 99%

Effects of Gas Pressure during Electron Beam Energy Deposition in the EBM Additive Manufacturing Process

Damri

Tiferet

Braun

et al. 2021

Metals

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Electron beam melting (EBM) is a metal powder bed fusion additive manufacturing (AM) technology that facilitates the production of metal parts by selectively melting areas in layers of metal powder. The electron beam melting process is conducted in a vacuum chamber environment regulated with helium (He) at a pressure on the scale of 10−3 mbar. One of the disadvantages of vacuum environments is the effect of vapor pressure on volatile materials: indeed, elements in the pre-alloyed powder with high vapor pressure are at risk of evaporation. Increasing the He pressure in the process can improve the thermodynamic stability of the pre-alloyed components and decrease the composition volatility of the solid. However, increasing the pressure can also attenuate the electrons and consequently reduce the energy deposition efficiency. While it is generally assumed that the efficiency of the process is 90%, to date no studies have verified this. In this study, Monte Carlo simulations and detailed thermal experiments were conducted utilizing EGS5 and an Arcam Q20+ machine. The results reveal that increasing the gas pressure in the vacuum chamber by one order of magnitude (from 10−3 mbar to 10−2 mbar) did not significantly reduce the energy deposition efficiency (less than 1.5%). The increase in gas pressure will enable the melting of alloys with high vapor pressure elements in the future.

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“…Our observation of successful applications reported in the literature for overlayer and substrate systems is that such methods are typically useful over rather narrow energy ranges close to an isolated photoelectron peak where inelastic mean free paths can be considered constant or simple corrections applied and interfering peaks do not cause additional complications. Simple methods to translate average electron energy loss into material thickness have already been demonstrated for 10‐keV electrons, providing some optimism that a straightforward method of describing XPS backgrounds is possible …”

Section: Introductionmentioning

confidence: 99%

A simple approach to measuring thick organic films using the XPS inelastic background

Shard

Spencer

2017

Surface & Interface Analysis

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In this work, we explore the possibility of finding a simple mathematical function that describes XPS background intensities as a function of energy and depth of emission. We describe the shape of the global structure of the background in XPS survey spectra for organic overlayer films with thicknesses greater than~10 nm. In this situation, the shape of XPS backgrounds becomes statistical, and the detailed structure of, for example, energy-loss functions and elastic-scattering cross sections can be disregarded. Using Irganox 1010 as a model organic overlayer on silicon dioxide, gold, and silver substrates, a consistent description of the XPS background can be found, and overlayer thicknesses greater than 50 nm can be measured in the case of gold substrates.Furthermore, by using a suitable subset of these spectra, it is possible to separate the influence of overlayer thickness, electron kinetic energy, and intensity on the global shape of the spectrum. We show that it is possible to fully describe the shape of calibrated XPS survey spectra with reasonable accuracy for samples that have organic overlayers using only binding energy and sensitivity factor data. The same functions are shown to provide a reasonable description of the XPS spectra of silicon with an oxide overlayer.

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Algorithm for evaluating layer thickness based on electron average energy shift analysis

Cited by 4 publications

References 24 publications

Low-Atomic-Number Nanometric Film Production Method for keV Electron Scattering Measurements

Low-Atomic-Number Nanometric Film Production Method for keV Electron Scattering Measurements

Effects of Gas Pressure during Electron Beam Energy Deposition in the EBM Additive Manufacturing Process

A simple approach to measuring thick organic films using the XPS inelastic background

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