2019
DOI: 10.1364/oe.27.032409
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Alignment tolerant, low voltage, 023 Vcm, push-pull silicon photonic switches based on a vertical pn junction

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Cited by 11 publications
(7 citation statements)
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“…A slot was etched in the center of the disc, with dimensions about 2 µm × 0.3 µm to suppress higher-order modes. A vertical p-n junction was used for the microdisc, which improves the modulation efficiency [31], [32] and the fabrication tolerance [33]. To reduce dopant-induced optical loss, only about one-half of the perimeter was doped with p (BF 2 , 4×10 13 cm −2 , 380 keV) and n (As, 4×10 13 cm −2 , 70 keV) dopants, and the regions of the disc near the waveguides were left undoped [34].…”
Section: Methodsmentioning
confidence: 99%
“…A slot was etched in the center of the disc, with dimensions about 2 µm × 0.3 µm to suppress higher-order modes. A vertical p-n junction was used for the microdisc, which improves the modulation efficiency [31], [32] and the fabrication tolerance [33]. To reduce dopant-induced optical loss, only about one-half of the perimeter was doped with p (BF 2 , 4×10 13 cm −2 , 380 keV) and n (As, 4×10 13 cm −2 , 70 keV) dopants, and the regions of the disc near the waveguides were left undoped [34].…”
Section: Methodsmentioning
confidence: 99%
“…Although the optical switches using the carrier injection with a pin junction [93,94] is the main principle to achieve large phase modulation, its speed and power consumption suffer owing to the minority carrier response in Si compared to the modulators mainly using a pn junction [42]. The feasibility of the optical switches using a p-n junction is reported to achieve high-speed operation and low power consumption [95]. However, due to large carrier-induced loss for phase modulation, the crosstalk of Si pn and pin structures is worse compared to other structures [45][46][47][48].…”
Section: Optical Switchesmentioning
confidence: 99%
“…For these reasons, the active modulator region is a vertical pn junction (Figure 15) that produces a larger effective index change than horizontal (lateral) ones [40]. In addition to their versatility, vertical designs are less sensitive to fabrication variations than conventional ones [41]. L3MATRIX modulators also benefit from the high tolerance to mask alignment inaccuracies because their fabrication depends on the implantation energy rather than lithography resolution.…”
Section: Conventional Modulatorsmentioning
confidence: 99%