2005
DOI: 10.1016/j.diamond.2005.08.005
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All amorphous SiC based luminescent microcavity

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Cited by 6 publications
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“…The multiband PL spectra indicate that the recombination process occurs through the localized states in the a-SiC:H structure. 4) A previous study 11) revealed that increasing the carbon content in the a-SiC:H films may result in the formation of methyl configurations, thus increasing the number of microvoids and defect states and, in turn, deteriorating the optoelectronic properties of the films. a-SiC:H films deposited on c-Si with a high gas flow rate ratio (R ¼ 20) show low PL intensity with the peak blue shifted as shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…The multiband PL spectra indicate that the recombination process occurs through the localized states in the a-SiC:H structure. 4) A previous study 11) revealed that increasing the carbon content in the a-SiC:H films may result in the formation of methyl configurations, thus increasing the number of microvoids and defect states and, in turn, deteriorating the optoelectronic properties of the films. a-SiC:H films deposited on c-Si with a high gas flow rate ratio (R ¼ 20) show low PL intensity with the peak blue shifted as shown in Fig.…”
Section: Resultsmentioning
confidence: 99%