All-silicon carrier accumulation modulator based on a lateral metal-oxide-semiconductor capacitor

Debnath, Kapil; Thomson, David J.; Zhang, Weiwei; Khokhar, Ali Z.; Littlejohns, Callum G.; Byers, James; Mastronardi, Lorenzo; Husain, Muhammad; Ibukuro, Kouta; Gardes, Frederic Y.; Reed, Graham T.; Saito, Shinichi

doi:10.1364/prj.6.000373

Cited by 48 publications

(29 citation statements)

References 21 publications

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“…For the silicon WGs connected to the doped slabs, the lightly P-doping concentration is chosen to be 1 × 10 18 cm −3 to lower the electrical access resistance and optical propagation loss. The measured propagation loss due to 1 × 10 18 cm −3 doping was about 3.4 dB/mm 25 . Hence, an additional propagation-loss would be induced depending on both the doping and device length.…”

Section: Resultsmentioning

confidence: 93%

“…A short switching-time of <2.5 ns and the switching ER of 12.5–23.1 dB were experimentally achieved and the size of this mode switch is about 350 μm. Nevertheless, the traditional EO and TO effects in silicon, such as the Pockels effect and the Franz–Keldysh effect are relatively small, which would lead to a big size of the EO or TO phase-shifter to achieve the essential phase-transition 25 .…”

Section: Introductionmentioning

confidence: 99%

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Silicon Mode-Selective Switch via Horizontal Metal-Oxide-Semiconductor Capacitor Incorporated With ENZ-ITO

Jiang

Miao

2019

Sci Rep

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A silicon mode-selective switch (MSS) is proposed by using a horizontal metal-oxide-semiconductor (MOS) capacitor incorporated with the epsilon-near-zero (ENZ) indium-tin-oxide (ITO). The carrier concentration of the double accumulation-layers in ITO can be adjusted via the applied gate-voltage to achieve the desired switching state. The MOS-type mode of the central MOS-capacitor based triple-waveguide coupler is introduced and optimised by using the full-vectorial finite element method to switch the “OFF” and “ON” states. The thickness of the accumulation layer and the optimal design are studied by using the 3D full-vectorial eigenmode expansion method. The optimised quasi-TE0 and quasi-TE1 modes based MSSes are with the extinction ratios of 28.52 dB (19.05 dB), 37.29 dB (17.8 dB), and 37.29 dB (23.7 dB), at “OFF” (“ON”) states for the accumulation-layer thicknesses of 1.5, 5.0, and 10.0 nm, respectively. The operation speed can achieve to be 6.3 GHz, 6.2 GHz, and 6.2 GHz for these three accumulation-layer thicknesses, respectively. The performance of the proposed MSS with a 2.5 V gate-voltage is also studied for preventing the oxide breakdown. The proposed MSS can be applied in the mode-division-multiplexing networks for signal switching and exchanging.

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Section: Resultsmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Silicon Mode-Selective Switch via Horizontal Metal-Oxide-Semiconductor Capacitor Incorporated With ENZ-ITO

Jiang

Miao

2019

Sci Rep

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“…By shortening the phase shifter length to L = 0.8 mm = 800 µm, the speed goes up to 90 GHz, the insertion loss goes down to IL = 3.4 + 0.6 = 4 dB while the extinction ratio decreases to ER = 3 dB. Although being much smaller, this ER value is widely reported in literature as an acceptable value [22,[46][47][48][49][50]. This design is referred to as 'Modulator B'.…”

Section: Optimizing the Modulator Parametersmentioning

confidence: 96%

Design of a 90 GHz SOI Fin Electro-Optic Modulator for High-Speed Applications

et al. 2019

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Introducing high speed networks, such as the fifth generation of mobile technology and related applications including the internet of things, creates a pressing demand for hardware infrastructure that provides sufficient bandwidth. Here, silicon-based microwave-photonics presents a solution that features easy and inexpensive fabrication through a mature platform that has long served the electronics industry. In this work, the design of an electro-optic modulator is proposed where the ‘fin’ structure is adopted from the domain of electronics devices, with emphasis on the high speed of operation. The proposed modulator is customized to provide a bandwidth of 90 GHz with a small phase shifter length of 800 μm and an optical insertion loss of 4 dB. With such a speed, this proposed modulator fits high-speed applications such as modern tele-communications systems.

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“…This section provides some research highlights from the various SOI platforms that CORNERSTONE currently offers via its MPW service, including both passive [26,27] and active devices [28][29][30][31][32], and other components, which have been demonstrated by research groups around the globe. Since the optimal platform is dependent on the application, CORNERSTONE offers three different top Si overlayer thicknesses: 220 nm, 340 nm and 500 nm, with the 220 nm thickness targeting datacoms applications, the 340 nm thickness targeting low loss applications such as quantum photonics, and the 500 nm thickness targeting mid-IR (MIR) applications.…”

Section: Current Cornerstone Platformsmentioning

confidence: 99%

CORNERSTONE’s Silicon Photonics Rapid Prototyping Platforms: Current Status and Future Outlook

Littlejohns

Rowe

et al. 2020

Applied Sciences

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The field of silicon photonics has experienced widespread adoption in the datacoms industry over the past decade, with a plethora of other applications emerging more recently such as light detection and ranging (LIDAR), sensing, quantum photonics, programmable photonics and artificial intelligence. As a result of this, many commercial complementary metal oxide semiconductor (CMOS) foundries have developed open access silicon photonics process lines, enabling the mass production of silicon photonics systems. On the other side of the spectrum, several research labs, typically within universities, have opened up their facilities for small scale prototyping, commonly exploiting e-beam lithography for wafer patterning. Within this ecosystem, there remains a challenge for early stage researchers to progress their novel and innovate designs from the research lab to the commercial foundries because of the lack of compatibility of the processing technologies (e-beam lithography is not an industry tool). The CORNERSTONE rapid-prototyping capability bridges this gap between research and industry by providing a rapid prototyping fabrication line based on deep-UV lithography to enable seamless scaling up of production volumes, whilst also retaining the ability for device level innovation, crucial for researchers, by offering flexibility in its process flows. This review article presents a summary of the current CORNERSTONE capabilities and an outlook for the future.

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All-silicon carrier accumulation modulator based on a lateral metal-oxide-semiconductor capacitor

Cited by 48 publications

References 21 publications

Silicon Mode-Selective Switch via Horizontal Metal-Oxide-Semiconductor Capacitor Incorporated With ENZ-ITO

Silicon Mode-Selective Switch via Horizontal Metal-Oxide-Semiconductor Capacitor Incorporated With ENZ-ITO

Design of a 90 GHz SOI Fin Electro-Optic Modulator for High-Speed Applications

CORNERSTONE’s Silicon Photonics Rapid Prototyping Platforms: Current Status and Future Outlook

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