Alloys of the Cr–Ni–Si system for obtaining resistive elements of integrated microcircuits by magnetron sputtering

Abstract

This article presents the results of the study of the effect of annealing on the sheet resistivity and temperature coefficient of resistance (TCR) of resistive films obtained from targets of the Cr–Ni–Si system using magnetron sputtering. A diagram of the composition–sheet resistivity of the Cr–Ni–Si system films with a thickness of 100 nm is proposed. It was established that resistive films of the Cr–Ni–Si system deposited by magnetron sputtering on silicon semiconductor plates with a SiO2 sublayer with a thickness of 100 nm, have sheet resistivity up to 350 Ω/square. It is shown that it is necessary to determine their eutectic compositions for the manufacture of targets by casting. Calculations were carried out and it was established that eutectics of the Cr–Ni–Si system contain 36.4 and 38.5 at.% Ni, which is 4 to 6 times higher than in the PC series alloys of this system. Due to the high content of Ni sheet resistivity films of eutectic compositions with a thickness of 100 nm is in the range from 100 to 200 Ω/square. It was noted that it is necessary to develop new four-five-component alloys based on the Cr–Ni–Si system with the introduction of refractory (Mo, Nb) and rare-earth (La, Y) elements into it, in order to increase the sheet resistivity of films and to decrease the melting temperature of alloys.

Manufacturing Technology of Pressure Sensor’s Sensitive Elements Based on “Sapphire – Viterious Dielectric – Ceramic” Junction

“…Пластины сапфира с ориентацией (1 02), служащие подложками для изготовления чувствительного элемента, перед осаждением слоев кремния отжигаются при температуре 1400°С в течение 60 минут, что позволяет удалить с поверхности сапфира углеродные и кислородные загрязнения и обеспечить высокое качество структуры приповерхностной области слоя Si. Далее осаждается слой поликристаллического кремния методом высокочастотного распыления [9][10][11][12][13][14][15] с последующим проведением фотолитографии для формирования тензорезисторов. Травление слоев поликристаллического кремния методом избирательного анизотропного травления необходимо для последующего формирования контактов к резисторам [16].…”