Alpha-induced soft errors in Floating Gate flash memories

Semicond. Sci. Technol.

2017

We present a comprehensive review of the effects of ionizing radiation on advanced flash memories. The effects of ionizing radiation as well as the mechanisms underlying the observed phenomena are thoroughly discussed on both floating gate cells and the complex control circuitry. The covered effects are relevant for all floating-gate based flash memories that require very high levels of reliability, from critical applications at the terrestrial level to radiation-harsh environments, such as space, nuclear power plants, and high-energy physics experiments.

Section: Single Event Upsets In Fg Cellsmentioning

confidence: 99%

“…Then, with feature size scaling, the shrinking of FG cells has led to an increase in the sensitivity to external disturbances, including radiation. As a result, memory cells have become sensitive to single event effects [15], up to a point when atmospheric neutrons [16], alpha particles [17], and even muons [18] can cause upsets.…”

Section: Introductionmentioning

confidence: 99%

Space and terrestrial radiation effects in flash memories

Semicond. Sci. Technol.

2017

“…Then, the threshold LET for FG errors has been decreasing more and more, as the cell size has been shrunk and the number of electrons on which FG transistors rely has become smaller and smaller [7], [8]. The first Flash device that was reported to be sensitive to alpha particles was a 50-nm MLC NAND Flash [8], [12], whereas, to our knowledge, SLC NAND Flash have not yet reported to be sensitive to alphas (down to the 34-nm node) [13].…”

Section: Introductionmentioning

confidence: 99%

Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells

et al. 2017

IEEE Trans. Nucl. Sci.

Abstract-Floating gate cells in advanced NAND Flash memories, with single-level and multi-level cell architecture, were exposed to low-energy proton beams. The first experimental evidence of single event upsets by proton direct ionization in floating gate cells is reported. The dependence of the error rate versus proton energy is analyzed in a wide energy range. Proton direct ionization events are studied and energy loss in the overlayers is discussed. The threshold LET for floating gate errors in multi-level and single-level cell devices is modeled and technology scaling trends are analyzed, also discussing the impact of the particle track size.

“…Recently, evidence has been shown that even non-volatile memories, such as Floating Gate (FG) NAND Flash memories, can be susceptible to being upset by neutrons and alpha particles, at least in multi-level-cell architectures [2]- [3]. Data on NOR Flash devices have been reported as well during high-altitude life tests [4].…”

Section: Introductionmentioning

confidence: 99%

Heavy-ion induced single event upsets in phase-change memories

2014 IEEE International Reliability Physics Symposium

et al. 2014

Self Cite

We study the effects of exposure to accelerated neutron beams of Floating Gate \ud (FG) Flash memories with NOR architecture. Error rates as well as threshold voltage shifts \ud are examined and mechanisms are discussed. A comparison with NAND Flash memories, \ud with both multi-level and single-level cell architecture, is performed. In addition to prompt \ud effects, retention of irradiated cells is analyzed for several months after irradiation. Thanks to \ud tail distributions, we can assess possible rare events