Heavy-ion induced single event upsets in phase-change memories

Gerardin, Simone; Bagatin, M.; Paccagnella, A.; Visconti, A.; Bonanomi, M.; Beltrami, S.; Frost, Christopher; Ferlet-Cavrois, V.

doi:10.1109/irps.2014.6860586

Cited by 2 publications

(1 citation statement)

References 17 publications

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“…Gerardin et al [37] an a lyzed the sen si tiv ity of 45-nm phase change mem ory cells to neu trons and heavy ions. No er rors were ob served af ter neu tron irra di a tion with a ter res trial-like spec trum.…”

Section: Phase Change Mem Orymentioning

confidence: 99%

Overview of radiation effects on emerging non-volatile memory technologies

Fetahovic

Dolicanin

Lazarevic³

et al. 2017

NUCL TECH RAD PROT

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2 Vin~a In sti tute of Nu clear Sci ences, Uni ver sity of Bel grade, Bel grade, Ser bia 3 Fac ulty of Tech nol ogy and Met al lurgy, Uni ver sity of Bel grade, Bel grade, Ser bia Technical pa per http://doi.org/10.2298/NTRP1704381FIn this pa per we give an over view of ra di a tion ef fects in emer gent, non-vol a tile mem ory technol o gies. In ves ti ga tions into ra di a tion hard ness of re sis tive ran dom ac cess mem ory, ferro electric ran dom ac cess mem ory, mag neto-re sis tive ran dom ac cess mem ory, and phase change mem ory are pre sented in cases where these mem ory de vices were sub jected to dif fer ent types of ra di a tion. The ob tained re sults proved high ra di a tion tol er ance of stud ied de vices mak ing them good can di dates for ap pli ca tion in ra di a tion-in ten sive en vi ron ments. Key words: non-vol a tile mem ory, ra di a tion ef fect, re sis tive RAM, ferro elec tric RAM, mag neto-re sis tive RAM, phase change mem ory I. S. Fetahovi}, et al.: Over view of Ra di a tion

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Section: Phase Change Mem Orymentioning

confidence: 99%