Backround:
In this study, we report for the first time that the addition of an intrinsic layer to the a-Si: H p-i-n solar cell structure greatly enhances the conversion efficiency. The a-Si: H p-i-n solar cells were grown using Plasma Enhanced Chemical Vapor Deposition (PECVD) techniques on the Indium Tin Oxide (ITO) substrate and added an intrinsic layer with the p-i1-i2-n structure in order to prevent sunlight energy from being absorbed the first intrinsic layer can be absorbed by the second intrinsic layer.
Result
The a-Si: H p-i-n and p-i1-i2-n solar cells were characterized including optical properties, electrical properties, surface morphology, thickness, band-gap using Ellipsometric Spectroscopy (ES). Furthermore, from the optical constant and thin film thickness, the reflectance and transmittance of each sample were obtained. The p-i-n and p-i1-i2-n samples show good transparency in the infrared region and this transparency decreases in the visible light region shows an interference pattern with a sharp decrease in transmission at the absorption edge and the performance of solar cells (curve I-V) measured by use sun simulator and sunshine.
Conclussion:
Our results show that there is a very good increase in the efficiency of the a-Si: H p-i1-i2-n solar cells by 58.6% of the original p-i-n structure.