2007
DOI: 10.1088/0953-8984/19/7/076206
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Aluminium-induced nanocrystalline Ge formation at low temperatures

Abstract: The present work contributes to establishing the role of hydrogenation and of the substrates in the aluminium-induced crystallization process of amorphous germanium layers. For such a purpose, four series of a-Ge(Al) samples, deposited under identical nominal conditions, were studied: hydrogenated samples, H-free samples, and samples deposited on crystalline silicon and on glass substrates, respectively. On purpose, the impurity concentration was kept at a doping level (10⁻⁵<[Al/Ge]<2 × 10⁻³). Furthermore, the… Show more

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Cited by 14 publications
(13 citation statements)
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“…We can see from Figure A that the Ge‐Ge TO peak shifts toward the peak position of the c‐Ge wafer for both substrates with increasing the annealing temperatures from 300°C to 500°C. As seen in Figure A, the difference of Raman shift between the films is due to the effect of grain size and stress . The FWHM value is 1 of the good indications of crystal quality of the films; the higher crystal quality gives the lower value of FWHM.…”
Section: Resultsmentioning
confidence: 94%
“…We can see from Figure A that the Ge‐Ge TO peak shifts toward the peak position of the c‐Ge wafer for both substrates with increasing the annealing temperatures from 300°C to 500°C. As seen in Figure A, the difference of Raman shift between the films is due to the effect of grain size and stress . The FWHM value is 1 of the good indications of crystal quality of the films; the higher crystal quality gives the lower value of FWHM.…”
Section: Resultsmentioning
confidence: 94%
“…Sputtering is used to deposit a-semiconductors and metal thin lm by sputter out target atom bombarding with ions in a high vacuum chamber. 49,[89][90][91][92][93][94][95][96][97][98] Zanatta et al 89 deposited hydrogenated a-Ge:H and Al lms on c-Si substrate by sputtering in a high vacuum (residual pressure ∼3 × 10 −6 mbar, radio frequency ∼13.56 MHz) sputtering system with the substrate held at 220 °C. Wang et al 90 prepared a-Si and Al bilayer system by magnetron sputtering in a high vacuum chamber.…”
Section: Physical Methodsmentioning
confidence: 99%
“…A third and very well-documented method of enhancing grain sizes at low temperatures is that of metal-induced crystallization (MIC) and metal-induced lateral crystallization (MILC) [54][55][56][57][58][59][60][61][62][63][64]. In both MIC and MILC, a metal (typically nickel) is brought into contact with Ge or Si and annealed at a low temperature (typically up to 5500 C for Ge).…”
Section: Low-t Grain Engineeringmentioning
confidence: 99%