2010
DOI: 10.1002/adma.200903656
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Aluminothermal Reaction Approach for Micro‐/Nanofabrications: Syntheses of In2O3 Micro‐/Nanostructures and InN Octahedral Nanoshells

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Cited by 15 publications
(11 citation statements)
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“…As an important wide band gap transparent semiconductor, In 2 O 3 has great applications in electronic and optoelectronic devices, such as transparent electronics, solar cells, light-emitting diodes, and gas sensors, etc . Here, we fabricated single nanostructure-based FETs directly on the grown Si/SiO 2 substrate to investigate the electric transport properties of our kinked In 2 O 3 nanostructures. Briefly, the silicon substrate with grown In 2 O 3 nanostructures was cleaned with ethanol several times and dried for use.…”
Section: Resultsmentioning
confidence: 99%
“…As an important wide band gap transparent semiconductor, In 2 O 3 has great applications in electronic and optoelectronic devices, such as transparent electronics, solar cells, light-emitting diodes, and gas sensors, etc . Here, we fabricated single nanostructure-based FETs directly on the grown Si/SiO 2 substrate to investigate the electric transport properties of our kinked In 2 O 3 nanostructures. Briefly, the silicon substrate with grown In 2 O 3 nanostructures was cleaned with ethanol several times and dried for use.…”
Section: Resultsmentioning
confidence: 99%
“…In the CVD approach, the surface energy sequence can be altered by gas-phase supersaturation related to the growth temperature. 28 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 Figure 2b shows the magnified field-emission scanning electron microscopy (FE-SEM) image of an individual cube with smooth square facets. The shape is described by the 3D representation in 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 …”
mentioning
confidence: 98%
“…In 2 O 3 is an important wide band‐gap transparent semiconductor with a direct band gap of around 3.6 eV and an indirect band gap of around 2.5 eV. It has potential applications in many electronic and optoelectronic devices 21–27. In this report, using our synthesized transferable In 2 O 3 nanowire mats as the active channel, we fabricated transparent thin‐film transistors (TFTs) to demonstrate their potential applications in transparent electronics.…”
Section: Methodsmentioning
confidence: 99%