“…Aluminium was chosen as the material for infiltration, as there is extensive knowledge in the fabrication of Al 2 O 3 thin films via ALD, both through deposition on surfaces and through infiltration into various polymers [26,27]. Precursor infiltration and metal coordination to the polymer is expected due to the strong chemical interaction between Al and pyridine [28,29]. Alumina is a high-dielectric constant (high-k) material that excels as a diffusion barrier with good thermal stability, resulting in it having a wide-range of uses in the semiconductor industry [30,31].…”