Amidoximation of the Acrylonitrile Polymer Grafted on Poly(Tetrafluoroethylene-co-hexafluoropropylene) Films and Its Relevance to the Electroless Plating of Copper

Abstract

Argon plasma-pretreated poly(tetrafluoroethylene-co-hexafluoropropylene) (FEP) films were subjected to UV-induced surface graft copolymerization with acrylonitrile (AN). The AN graft-copolymerized FEP (AN-g-FEP) surface was further reacted with hydroxylamine to introduce amidoxime groups on the surface (the amidoximated AN-g-FEP surface). Electroless plating of copper could be carried out effectively on the AN-g-FEP and amidoximated AN-g-FEP surfaces after sensitization in SnCl2 solution and activation in PdCl2 solution. The plasma pretreatment time of the FEP substrate and the UV graft copolymerization time affected the graft concentration of the AN polymer on the FEP surface. The surface compositions and the degree of amidoximation (DA) of the surface-modified FEP films were determined by X-ray photoelectron spectroscopy (XPS). The amidoximated FEP surface formed a complex with palladium ions and exhibited a strong ability to extract copper ions from the plating solution. The interaction of the AN-g-FEP and its amidoximated surfaces with evaporated copper atoms was investigated in situ by XPS. The T-peel adhesion strength of the electrolessly deposited copper with the amidoximated AN-g-FEP surface was enhanced to about 12 N/cm, from about 5 N/cm with the AN-g-FEP surface. The adhesion failure of the electrolessly deposited copper with the amidoximated AN-g-FEP film occurred cohesively inside the FEP substrate.

Preparation of novel nano-adsorbent based on organic–inorganic hybrid and their adsorption for heavy metals and organic pollutants presented in water environment

“…As mentioned above, the XPS results support an adsorption mechanism of covalent bonds formed between Pb 2+ and amide groups. The changes in the N 1s spectral line shapes indicate that strong interactions must have occurred between the lead atoms and the nitrogen atoms of the amidoxime groups on the P(A-O)/AT surface [43]. Moreover, the BE of O 1s electron of P(A-O)/AT-Pb (531.80 eV) are found to be 0.28 eV (Fig.…”

Branched Fluoropolymer−Si Hybrids via Surface-Initiated ATRP of Pentafluorostyrene on Hydrogen-Terminated Si(100) Surfaces

“…58,59 Fluoropolymers are promising materials for interlayer dielectric application because of their low dielectric constants and good chemical and thermal stability. [58][59][60][61] Most of studies have involved fluoropolymer films with ultrahydrophobic properties and low dielectric constants from plasma polymerization and deposition. [58][59][60][61][62][63][64] In this work, fluoropolymer-silicon hybrids, consisting of linear and highly branched PFS polymers covalently attached on the silicon surface, were prepared.…”

Poly(amidoxime)-reduced graphene oxide composites as adsorbents for the enrichment of uranium from seawater

“…The new peak at 401.5 ± 0.2 eV may be attributed to the positively charged nitrogen atoms [25,26]. The amidoximation degree of PAO/rGO composites can be semi-quantita-tively determined by the integration area of oxime N 1s signal at 400.2 ± 0.2 eV to the area of N 1s signal at 399.4 ± 0.2 eV [25]. The calculated results gave similar amidoximation degrees of PAO/rGO composites, indicating the effectively conversion of poly(acrylonitrile) to PAO.…”

“…The two typical peaks of PAO were found at 399.4 ± 0.2 and 400.2 ± 0.2 eV, which were assigned to N≡C-CH/ NH 2 -C=N-OH and H 2 N-C=NOH, respectively [25]. The new peak at 401.5 ± 0.2 eV may be attributed to the positively charged nitrogen atoms [25,26].…”

“…The two typical peaks of PAO were found at 399.4 ± 0.2 and 400.2 ± 0.2 eV, which were assigned to N≡C-CH/ NH 2 -C=N-OH and H 2 N-C=NOH, respectively [25]. The new peak at 401.5 ± 0.2 eV may be attributed to the positively charged nitrogen atoms [25,26]. The amidoximation degree of PAO/rGO composites can be semi-quantita-tively determined by the integration area of oxime N 1s signal at 400.2 ± 0.2 eV to the area of N 1s signal at 399.4 ± 0.2 eV [25].…”