Ammonothermal and
            <scp>HVPE</scp>
            Bulk Growth of
            <scp>GaN</scp>

Kucharski, Robert; Sochacki, Tomasz; Łucznik, B.; Amilusik, Mikolaj; Grabiańska, Karolina; Iwińska, Małgorzata; Boćkowski, Michał

doi:10.1002/9783527824724.ch18

Cited by 4 publications

(8 citation statements)

References 74 publications

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“…Many reviews and perspectives have targeted the ammonothermal growth of bulk GaN single crystals [81,86,87,[98][99][100]105,128,142,[213][214][215][216]. Therefore, this section provides an overview of these reviews and perspectives from 2015-2023.…”

Section: Gan (Overview Of Available Literature)mentioning

confidence: 99%

Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential

Wostatek,

Chirala,

Stoddard

et al. 2024

Materials

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The state-of-the-art ammonothermal method for the growth of nitrides is reviewed here, with an emphasis on binary and ternary nitrides beyond GaN. A wide range of relevant aspects are covered, from fundamental autoclave technology, to reactivity and solubility of elements, to synthesized crystalline nitride materials and their properties. Initially, the potential of emerging and novel nitrides is discussed, motivating their synthesis in single crystal form. This is followed by a summary of our current understanding of the reactivity/solubility of species and the state-of-the-art single crystal synthesis for GaN, AlN, AlGaN, BN, InN, and, more generally, ternary and higher order nitrides. Investigation of the synthesized materials is presented, with a focus on point defects (impurities, native defects including hydrogenated vacancies) based on GaN and potential pathways for their mitigation or circumvention for achieving a wide range of controllable functional and structural material properties. Lastly, recent developments in autoclave technology are reviewed, based on GaN, with a focus on advances in development of in situ technologies, including in situ temperature measurements, optical absorption via UV/Vis spectroscopy, imaging of the solution and crystals via optical (visible, X-ray), along with use of X-ray computed tomography and diffraction. While time intensive to develop, these technologies are now capable of offering unprecedented insight into the autoclave and, hence, facilitating the rapid exploration of novel nitride synthesis using the ammonothermal method.

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Section: Gan (Overview Of Available Literature)mentioning

confidence: 99%

Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential

Wostatek,

Chirala,

Stoddard

et al. 2024

Materials

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“…The growth of GaN by the ammonothermal method has been the subject of intense research for nearly three decades and is well summarized in recent reviews. 19,24,26 The typical ammonothermal process set up is illustrated in Figure 2. 27 Some of the key takeaways from the accumulated literature are that (a) linear crystal growth rates are relatively slow, with top reported values of around 100-200 µm/day for ammonobasic 28 and up to 700 µm /day for ammonoacidic growth, 29 (b) dislocation densities can be quite low, down as far as 100 defects/cm 2 , 30 (c) oxygen is the key impurity, 19 (d) simultaneous growth in different crystal planes can be destabilizing, 31 and (e) very long growth times are a significant drag on the speed of process innovation.…”

Section: Ammonothermal Nitridesmentioning

confidence: 99%

“…19,24,26 The typical ammonothermal process set up is illustrated in Figure 2. 27 Some of the key takeaways from the accumulated literature are that (a) linear crystal growth rates are relatively slow, with top reported values of around 100-200 µm/day for ammonobasic 28 and up to 700 µm /day for ammonoacidic growth, 29 (b) dislocation densities can be quite low, down as far as 100 defects/cm 2 , 30 (c) oxygen is the key impurity, 19 (d) simultaneous growth in different crystal planes can be destabilizing, 31 and (e) very long growth times are a significant drag on the speed of process innovation. From the industrial perspective, it appears that crystal quality (especially optical clarity), lateral crystal size scaling, and yield are the primary limiting factors.…”

Section: Ammonothermal Nitridesmentioning

confidence: 99%

“…The growth of GaN by the ammonothermal method has been the subject of intense research for nearly three decades and is well summarized in recent reviews 19,24,26 . The typical ammonothermal process set up is illustrated in Figure 2 27 .…”

Section: Ammonothermal Nitridesmentioning

confidence: 99%

“…Gallium nitride can be grown by hydride vaporphase epitaxy (HVPE). 18,19 While the method is relatively straightforward and the linear growth rates are very attractive, some of the troublesome details of the crystal growth have prevented a market takeover by HVPE over foreign material substrates. For one, the natural facets of gallium nitride behave in a way to decrease the cross-section of the crystal under typical HVPE conditions.…”

Section: Introductionmentioning

confidence: 99%

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Prospective view of nitride material synthesis

Stoddard

Pimputkar

2023

Int J Ceramic Engine & Sci

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The field of nitride‐based materials is producing some of the most promising and interesting candidates for advanced technology applications. Novel formulations and polymorphs are of interest for applications requiring one or more of: high hardness, high oxygen resistance at elevated temperatures, catalytic action, semiconductor light sources, and (ultra‐)wide band gap electronics. The synthesis of nitrides with excellent single crystal structural quality of an appreciable size is challenging whether working in solution growth techniques like ammonothermal and flux growth, or in vapor deposition techniques. This paper presents a perspective on recent developments in equipment and techniques for single crystal nitride synthesis with a view toward progress anticipated in the next 5–10 years.

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Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices

Stoddard

Pimputkar

2023

Crystals

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Gallium nitride continues to be a material of intense interest for the ongoing advancement of electronic and optoelectronic devices. While the bulk of today’s markets for low-performance devices is still met with silicon and blue/UV LEDs derived from metal–organic chemical vapor deposition gallium nitride grown on foreign substrates such as sapphire and silicon carbide, the best performance values consistently come from devices built on bulk-grown gallium nitride from native seeds. The most prominent and promising of the bulk growth methods is the ammonothermal method of high-pressure solution growth. The state-of-the-art from the last five years in ammonothermal gallium nitride technology is herein reviewed within the general categories of growth technology, characterization and defects as well as device performance.

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Ammonothermal and HVPE Bulk Growth of GaN

Cited by 4 publications

References 74 publications

Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential

Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential

Prospective view of nitride material synthesis

Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices

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