Amorphous carbon/crystalline silicon high voltage heterojunction diode prepared by photochemical vapour deposition

Hwang, Sheng-Jye; Fang, Yean–Kuen; Chen, K.H.; Liu, C.R.; Kuo, L.C.

doi:10.1049/el:19911268

Cited by 2 publications

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“…If the explanation given in [7] is true then we can say that the trapped charge densities in our devices, both at the interface and in the bulk, are negligibly small and have no significant influence on device behaviour. Production of a-C:H/Si diodes (for high voltage operation) using the technique of photochemical vapour deposition has also been reported [8]. This technique does not expose the growing film to ion bombardment and, it is suggested, results in reduced trapped charge densities.…”

Section: -Dc Self-bias (-Volts)mentioning

confidence: 99%

“…This technique does not expose the growing film to ion bombardment and, it is suggested, results in reduced trapped charge densities. The authors of [8] have successfully demonstrated that high voltage diodes prepared by this technique can withstand reverse bias voltages upto 400 V. Through optimisation of the growth conditions using detailed investigation of the film properties a more robust diode has been realised by rf-PECVD. In their report [7], a number of large crystallites of diamond, of size between 100 nm and 200 nm, were observed in the amorphous carbon matrix.…”

Section: -Dc Self-bias (-Volts)mentioning

confidence: 99%

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High Reverse Breakdown a-C:H/Si Diodes Manufactured by rf-PECVD

Paul

Clough

1999

MRS Proc.

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Thin films of hydrogenated amorphous carbon ( a-C:H ) deposited by radio frequency plasmaenhanced chemical vapour deposition ( rf-PECVD ) have been studied for various applications. An interesting property of these films is their high breakdown strength ( 10 7 Vcm -1 ). This property of a-C:H can be exploited in high breakdown heterostructure diodes or as passivation layers and insulator layers in MIS devices. Reports on the applications of a-C:H/Si diodes exist in the literature. Diodes in which the a-C:H films have been deposited by rf-PECVD, have been reported only once. In this article the diodes produced reportedly failed to exhibit reproducible I-V characteristics under high voltage stress. We have investigated the process dependence of structural and electrical properties of rf-PECVD a-C:H films deposited at room temperature from a CH 4 /Ar gas mixture (at a pressure of 100 mTorr) using a capacitively coupled rf-PECVD. We observe a clear correlation between the dc-self bias and the rectification ratio of a-C:H/Si heterojunction diodes. Optimised diodes show rectification ratios upto 10 4 and a stable reverse breakdown voltage, typically around 850 V. I-V and C-V measurements show no evidence of hystersis. Scanning Electron Microscopy was carried out to determine the quality of the films deposited. Micro-Raman analysis was used to estimate the I D /I G ratio in the films deposited under different dc-self bias.

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Section: -Dc Self-bias (-Volts)mentioning

confidence: 99%

Section: -Dc Self-bias (-Volts)mentioning

confidence: 99%

High Reverse Breakdown a-C:H/Si Diodes Manufactured by rf-PECVD

Paul

Clough

1999

MRS Proc.

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Carbon/Silicon Heterojunction Solar Cells: State of the Art and Prospects

Zhu

2015

Advanced Materials

168

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In the last few decades, advances and breakthroughs of carbon materials have been witnessed in both scientific fundamentals and potential applications. The combination of carbon materials with traditional silicon semiconductors to fabricate solar cells has been a promising field of carbon science. The power conversion efficiency has reached 15-17% with an astonishing speed, and the diversity of systems stimulates interest in further research. Here, the historical development and state-of-the-art carbon/silicon heterojunction solar cells are covered. Firstly, the basic concept and mechanism of carbon/silicon solar cells are introduced with a specific focus on solar cells assembled with carbon nanotubes and graphene due to their unique structures and properties. Then, several key technologies with special electrical and optical designs are introduced to improve the cell performance, such as chemical doping, interface passivation, anti-reflection coatings, and textured surfaces. Finally, potential pathways and opportunities based on the carbon/silicon heterojunction are envisaged. The aspects discussed here may enable researchers to better understand the photovoltaic effect of carbon/silicon heterojunctions and to optimize the design of graphene-based photodevices for a wide range of applications.

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Amorphous carbon/crystalline silicon high voltage heterojunction diode prepared by photochemical vapour deposition

Cited by 2 publications

References 0 publications

High Reverse Breakdown a-C:H/Si Diodes Manufactured by rf-PECVD

High Reverse Breakdown a-C:H/Si Diodes Manufactured by rf-PECVD

Carbon/Silicon Heterojunction Solar Cells: State of the Art and Prospects

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