2019
DOI: 10.1021/acsami.9b14310
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Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD

Abstract: Amorphous InGaZnO x (a-IGZO) thin-film transistors (TFTs) are currently used in flat-panel displays due to their beneficial properties. However, the mobility of ∼10 cm2/(V s) for the a-IGZO TFTs used in commercial organic light-emitting diode TVs is not satisfactory for high-resolution display applications such as virtual and augmented reality applications. In general, the electrical properties of amorphous oxide semiconductors are strongly dependent on their chemical composition; the indium (In)-rich IGZO ac… Show more

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Cited by 235 publications
(185 citation statements)
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“…6. Despite fundamental differences in deposition techniques and layer thicknesses, this result is similar to the enhanced device performance previously reported for 100 nm ALD Al2O3 and thermal SiO2 gate insulators (11). In (11) however a 14% increase in semiconductor mobility is observed for Al2O3 devices, whereas a larger 64% increase is observed here.…”
Section: Resultssupporting
confidence: 88%
“…6. Despite fundamental differences in deposition techniques and layer thicknesses, this result is similar to the enhanced device performance previously reported for 100 nm ALD Al2O3 and thermal SiO2 gate insulators (11). In (11) however a 14% increase in semiconductor mobility is observed for Al2O3 devices, whereas a larger 64% increase is observed here.…”
Section: Resultssupporting
confidence: 88%
“…[ 2–4 ] There are various methods that can be used to grow metal oxide semiconductors; the most common of which is via gas phase techniques such as physical vapor deposition, [ 5 ] chemical vapor deposition, [ 6 ] and atomic layer deposition. [ 7 ] However, solution‐based manufacturing techniques promise several advantages such as higher throughput and easier scalability for a range of envisioned inexpensive large‐area electronic applications. [ 8,9 ]…”
Section: Introductionmentioning
confidence: 99%
“…Recently, there has been a strong interest in the use of InGaZnO 4 lm as a channel layer in thin lm transistors (TFTs). [1][2][3][4][5] However, these TFTs usually require high operation voltages (>10 V). High operation voltage results in high power consumption, a critical barrier for portable, battery-powered applications.…”
Section: Introductionmentioning
confidence: 99%