Amorphous Silicon-Doped Titania Films for on-Chip Photonics

Kornher, Thomas; Xia, Ke‐Qing; Kolesov, Roman; Villa, Bruno; Lasse, Stefan; Sandu, Cosmin S.; Wagner, Estelle; Harada, Scott; Benvenuti, Giacomo; Becker, Hans‐Werner; Wrachtrup, Jörg

doi:10.1021/acsphotonics.6b00919

Cited by 8 publications

(6 citation statements)

References 43 publications

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“…[6,35,36,56] A versatile technique employed to modify the morphology of the metal-oxide is by deliberate insertion of impurities in to the semiconducting material, also known as doping. [11,14,23,[57][58][59][60][61][62][63][64] The first reported work on plasmonic enhancement in DSSCs by Wen et al, has paved the way for tremendous growth in plasmonic dye sensitized solar cell technology. [65] The metal nanostructures augment light harvesting in photo-anodic materials leading to significant performances.…”

Section: Introductionmentioning

confidence: 99%

Ion‐Implantation in Titania‐Based Plasmonic Photo‐anodes: A Review

Vemula

Raavi

2022

Adv Materials Inter

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The metal‐oxide semiconductors exhibit remarkable optoelectronic properties and have immense implication in applications involving energy conversion, light emission, environmental remediation, etc. The presence of metal nanostructures in titanium dioxide (TiO2), zinc oxide metal‐oxide semiconductors have enhanced the photo‐activity, due to the plasmon resonances and are predominantly researched for organic and perovskite photovoltaics. Generally, the metal nanoparticle dopants are introduced by methods like sputtering, sol–gel, etc. However, compared with conventional doping methods, ion‐implantation technique is a purely physical process, and a high controllability and repeatability can be achieved. Here, the current status of synthesis of nanocomposites in TiO2‐based photo‐anodic applications by ion‐implantation method is reviewed, and there is no elaborate review on this topic. Finally, the future prospects of ion‐implantation technique for controlling the excitonic behavior in TiO2 are discussed.

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Section: Introductionmentioning

confidence: 99%

Ion‐Implantation in Titania‐Based Plasmonic Photo‐anodes: A Review

Vemula

Raavi

2022

Adv Materials Inter

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“…Whereas it is a quite promising platform for PICs, research on SRN waveguides is still in its infancy and some of the deposited SRN material exhibit quite large material losses (7 dB/cm [26]). Titanium dioxide (TiO 2 ), well-known as a candidate for high-κ gate dielectrics in memory capacitors and transistors in the CMOS ICs technology [32], is currently inspiring researchers within PICs due to its large refractive index (>2.2) and large nonlinear index being >3 times that of Si 3 N 4 , along with a large TPA-free bandgap (>3.1 eV) at 1550 nm, and a broad transparency window from visible to mid-infrared wavelengths [33][34][35][36][37][38][39][40][41][42][43]. Typically, TiO 2 waveguides have been fabricated, exhibiting linear losses around 5 dB/cm at telecommunication wavelengths (4 dB/cm [33], 5 dB/cm [35], 5.8 dB/cm [36], 4 dB/cm [37]), and TiO 2 photonic devices including directional couplers (DCs) [33] and microring resonators (MRRs) [36,37,39] have also been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Compact titanium dioxide waveguides with high nonlinearity at telecommunication wavelengths

Guan¹,

Hu²,

Oxenløwe³

et al. 2018

Opt. Express

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Dense integration of photonic integrated circuits demands waveguides simultaneously fulfilling requirements on compactness, low loss, high nonlinearity, and capabilities for mass production. In this work, titanium dioxide waveguides with a thick core of 380 nm exhibiting a compact mode size (0.43 μm) and a low loss (5.4 ± 1 dB/cm) at telecommunication wavelengths around 1550 nm have been fabricated and measured. A microring resonator having a 50 μm radius has been measured to have a loaded quality factor of 53500. Four-wave mixing experiments reveal a nonlinear parameter for the waveguides of 21-34 W m corresponding to a nonlinear index around 2.3-3.6 x 10 m/W, which results in a wavelength conversion efficiency of -36.2 dB. These performances, together with the potentially simple dispersion engineering to the fabricated waveguides by the post processes, yield a strong promise for the titanium dioxide waveguides applied in photonic integrated circuits, especially for nonlinear implementations.

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confidence: 99%

Deterministic Single-Ion Implantation of Rare-Earth Ions for Nanometer-Resolution Color-Center Generation

et al. 2019

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Single dopant atoms or dopant-related defect centers in a solid state matrix provide an attractive platform for quantum simulation of topological states [1], for quantum computing and communication, due to their potential to realize a scalable architecture compatible with electronic and photonic integrated circuits [2][3][4][5][6][7]. The production of such quantum devices calls for deterministic single atom doping techniques because conventional stochastic doping techniques are cannot deliver appropriate architectures. Here, we present the fabrication of arrays of praseodymium color centers in YAG substrates, using a deterministic source of single laser-cooled Pr + ions. The beam of single Pr + ions is extracted from a Paul trap and focused down to 30(9) nm. Using a confocal microscope we determine a conversion yield into active color centers up to 50% and realizing a placement accuracy of better than 50 nm. PACS numbers:Deterministic doping methods at the nm-scale provide a route towards scalable quantum information processing in solid state systems. Prominent examples of atomic systems in solid state hosts for quantum computing are single phosphorus atoms in silicon [8,9] and spin correlated pairs of such donors [10,11] which have led to studies of the scalability of large arrays of coupled donors [8]. Alternatively, single color centers [12] and the growing variety of single rare-earth ions (REI) doped into crystalline hosts have also been employed [2,3,[13][14][15][16]. Driven by proposed quantum applications, the need to deterministically place single dopants into nanostructured devices has led to the development of various techniques related to the silicon material system [17,18]. Crystalline hosts of color centers and REI, however, typically exhibit poor electronic properties, which inhibits single ion detection via active substrates [17] and therefore an alternative technique for deterministic implantation of dopants is required. Here, we present an inherently deterministic method for single ion implantation based on a segmented Paul trap which allows for implantation in any solid state material with a broad range of implantation energies.For characterizing the implantation method, we use single praseodymium ion detection in yttrium aluminum garnet (YAG) crystals based on upconversion microscopy. This detection scheme requires implanted praseodymium ions to arrange in the proper lattice position and reach the Pr 3+ charge state through a suitable annealing and activation procedure. An accurate determination of the ratio of detected ions to implanted ions, commonly referred to as implantation yield, has been performed for the first time at the level of single ions and will further foster the optimization of annealing procedures. In comparison to previous implantation-based nitrogen and silicon vacancy color center generation experiments [19], we achieve more than 20 times higher yield for the implantation of Pr + in YAG, even at much lower implantation energies with correspondingly smaller straggling-rela...

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Amorphous Silicon-Doped Titania Films for on-Chip Photonics

Cited by 8 publications

References 43 publications

Ion‐Implantation in Titania‐Based Plasmonic Photo‐anodes: A Review

Ion‐Implantation in Titania‐Based Plasmonic Photo‐anodes: A Review

Compact titanium dioxide waveguides with high nonlinearity at telecommunication wavelengths

Deterministic Single-Ion Implantation of Rare-Earth Ions for Nanometer-Resolution Color-Center Generation

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